Channel Hot-Carrier Stressing of Reoxidized Nitrided Oxide p-MOSFET‘s

IEEE Transactions on Electron Devices

Volumn 38, Issue 4, 1991, Pages 901-906

  Krick, John T ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; SEMICONDUCTOR DEVICES--RADIATION EFFECTS; SEMICONDUCTOR MATERIALS--HOT CARRIERS;

CHANNEL HOT CARRIER STRESSING; ELECTRON TRAPPING; GATE DIELECTRIC; SHORT CHANNEL MOSFETS; SUBMICROMETER DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026140960     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75221     Document Type: Article

References (15)

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