MOS Characteristics of NH3-Nitrided N2O-Grown Oxides

IEEE Electron Device Letters

Volumn 14, Issue 4, 1993, Pages 179-181

  Yoon, G W ^a   Joshi, A B ^a   Kim, J ^a   Kwong, Dim Lee ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CAPACITORS; ELECTRIC PROPERTIES; NITRIDING; NITROGEN; OXIDES; RELIABILITY;

CHARGE TRAPPING; DUAL GATE TECHNOLOGY;

MOS DEVICES;

EID: 0027574262     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215158     Document Type: Article

References (17)

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