MOSFET Degradation Due to Stressing of Thin Oxide

IEEE Transactions on Electron Devices

Volumn 31, Issue 9, 1984, Pages 1238-1244

  Liang, Mong Song ^a   Chang, Chi ^a   Yeow, Yew Tong ^a   Hu, Chenming ^a   Brodersen, Robert W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS - MEASUREMENTS; DATA STORAGE, DIGITAL - FIXED; DATA STORAGE, SEMICONDUCTOR - STORAGE DEVICES; TRANSISTORS, FIELD EFFECT - MEASUREMENTS;

EEPROMS; FOWLER-NORDHEIM TUNNELING; INTERFACE TRAPS; OXIDE TRAPS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021482910     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21694     Document Type: Article

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