The Effects of Boron Penetration on p+ Poly silicon Gated PMOS Devices

IEEE Transactions on Electron Devices

Volumn 37, Issue 8, 1990, Pages 1842-1851

  Pfiester, James R ^a   Baker, Frank K ^a   Mele, Thomas C ^a   Tseng, Hsing Huang ^a   Tobin, Philip J ^a   Hayden, James D ^a   Miller, James W ^a   Gunderson, Craig D ^a   Parrillo, Louis C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS - APPLICATIONS; ELECTRONS; FLUORINE COMPOUNDS - APPLICATIONS; SEMICONDUCTING SILICON - APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS - APPLICATIONS;

BORON PENETRATION EFFECTS; ELECTRON TRAPPING RATE; INTERFACE TRAP DENSITY; LOW-FIELD MOBILITY; PMOS SUBTHRESHOLD SLOPE; POLYSILICON GATED PMOS DEVICES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0025474417     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57135     Document Type: Article

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