Excellent Charge-Trapping Properties of Ultrathin Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing

IEEE Electron Device Letters

Volumn 9, Issue 4, 1988, Pages 168-170

  Hori, Takashi ^a   Wasaki, Hiroshii ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS - FABRICATION;

RAPID THERMAL PROCESSING; REOXIDIZED NITRIDED OXIDES; ULTRATHIN OXIDES;

OXIDES;

EID: 0023999376     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.678     Document Type: Article

References (13)

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10. T. Hori, Y. Naito, H. Iwasaki, and H. Esaki, “Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealing”, IEEE Electron Device Lett., vol. EDL-7, p. 669, 1986.
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13. T. Hori, H. Iwasaki, and K. Tsuji, “Charge-trapping properties of ultrathin rapidly nitrided oxides and reoxidized nitrided-oxides”, presented at the IEEE Semiconductor Interface Specialists Conf., Fort Lauderdale, FL, Dec. 1987.