Hole injection and transport in SiO2 films on Si

Applied Physics Letters

Volumn 27, Issue 8, 1975, Pages 437-439

  Weinberg, Z A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36749107295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.88522     Document Type: Article

References (16)

1. Calculations for an aluminum film 900 Å thick in vacuum give a transmittance of about 0.4 at 16.8 eV and [formula omitted] at 10 eV. Optical constants taken from