High quality oxynitride gate dielectrics prepared by reoxidation of NH3-nitrided SiO2 in N2O ambient

Electronics Letters

Volumn 31, Issue 14, 1995, Pages 1196-1198

  Han, L K ^a   Kim, J ^a   Yoon, G W ^a   Yan, J ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOS DEVICES; NITROGEN OXIDES; PROM; SILICA;

CHARGE TO BREAKDOWN CHARACTERISTICS; CHARGE TRAPPING; RAPID THERMAL PROCESSING; REOXIDATION;

OXIDATION;

EID: 0029637855     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950806     Document Type: Article

References (12)

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