Furnace Nitridation of Thermal SiO2 in Pure N2O Ambient for ULSI MOS Applications

IEEE Electron Device Letters

Volumn 13, Issue 2, 1992, Pages 117-119

  Ahn, J ^a   Ting, W ^a   Kwong, Dim Lee ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; HEAT TREATMENT - NITRIDING; SEMICONDUCTOR DEVICES, MOSFET; SILICA - HEAT TREATMENT;

CHANNEL HOT CARRIER STRESS; N-CHANNEL MOSFET; THERMAL GATE OXIDE; TIME-DEPENDENT DIELECTRIC BREAKDOWN; ULSI MOS CIRCUITS;

INTEGRATED CIRCUITS, ULSI;

EID: 0026819955     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144977     Document Type: Article

References (2)

1. T. Hori, “Deep-submicron nitrided-oxide CMOS technology for 3.3-V operation,” in IEDM Tech. Dig., 1990, p. 837.
2. H. S. Momose, T. Morimoto, K. Yamabe, and H. Iwai, “Relationship between mobility and residual-mechanical-stress as measured by raman spectroscopy for nitrided-oxide-gate MOSFETs,” in IEDM Tech. Dig., 1990, p. 65.