메뉴 건너뛰기




Volumn 40, Issue 6, 1993, Pages 1316-1322

Experimental Evidence of Two Species of Radiation Induced Trapped Positive Charge

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS;

EID: 0027809459     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273536     Document Type: Article
Times cited : (44)

References (16)
  • 1
    • 36449004449 scopus 로고
    • Positive charge generation in metal-oxide-semiconductor capacitors
    • Feb.
    • L.P. Trombetta, F.J. Feigl, and R.J. Zeto, “Positive charge generation in metal-oxide-semiconductor capacitors,” J. Appl. Phys., 69, (4), 2512, Feb. 1991.
    • (1991) J. Appl. Phys , vol.69 , Issue.4 , pp. 2512
    • Trombetta, L.P.1    Feigl, F.J.2    Zeto, R.J.3
  • 2
    • 84939367761 scopus 로고    scopus 로고
    • (Private Communication)
    • L.P. Trombetta (Private Communication).
    • Trombetta, L.P.1
  • 3
    • 36549098783 scopus 로고
    • An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors
    • Sept.
    • L.P. Trombetta, G.J. Gerardi, D.J. DiMaria, and E. Tierney, “An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors,” J. Appl. Phys. 64, (5), 2434, Sept. 1988.
    • (1988) J. Appl. Phys , vol.64 , Issue.5 , pp. 2434
    • Trombetta, L.P.1    Gerardi, G.J.2    DiMaria, D.J.3    Tierney, E.4
  • 4
    • 0342989983 scopus 로고
    • Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
    • Mar.
    • D.A. Buchanan, J.H. Stathis, and P.R. Wagner, “Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films,” Appl. Phys. Lett., 56, (11), Mar. 1990.
    • (1990) Appl. Phys. Lett , vol.56 , Issue.11
    • Buchanan, D.A.1    Stathis, J.H.2    Wagner, P.R.3
  • 5
    • 0023565388 scopus 로고
    • A comparison of positive charge generation in high field stressing and ionizing radiation on MOS structures
    • W.L. Warren, and P.M. Lenahan, “A comparison of positive charge generation in high field stressing and ionizing radiation on MOS structures,” IEEE Trans. Nucl. Sci., NS-34, 1355,(1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1355
    • Warren, W.L.1    Lenahan, P.M.2
  • 10
    • 0007240288 scopus 로고
    • Growth and annealing of trapped holes and interface states using time dependent biases
    • R.K. Freitag, C.M. Dozier, and D.B. Brown, “Growth and annealing of trapped holes and interface states using time dependent biases,” IEEE Trans. Nucl. Sci., NS-34, 1172, (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1172
    • Freitag, R.K.1    Dozier, C.M.2    Brown, D.B.3
  • 14
    • 0021427238 scopus 로고
    • Hole traps and trivalent silicon centers in metal/oxide/silicon devices
    • P.M. Lenahan, and P.V. Dressendorfer, “Hole traps and trivalent silicon centers in metal/oxide/silicon devices,” J. Appl. Phys., 55, 3495 (1984).
    • (1984) J. Appl. Phys , vol.55 , pp. 3495
    • Lenahan, P.M.1    Dressendorfer, P.V.2
  • 15
    • 84939350777 scopus 로고
    • Effects of introducing H2 into irradiated MOSFET's from room temperature to 250 C
    • Ed. R.C. Helms and B.E. Deal, Plenum Press
    • R.E. Stahlbush, and A.H. Edwards, “Effects of introducing H2 into irradiated MOSFET's from room temperature to 250 C,” The Physics and Chemistry of SiO2 and the Si/SiO2 interface, Ed. R.C. Helms and B.E. Deal, Plenum Press, 1992
    • (1992) The Physics and Chemistry of SiO2 and the Si/SiO2 interface
    • Stahlbush, R.E.1    Edwards, A.H.2
  • 16
    • 84939383681 scopus 로고    scopus 로고
    • The role of border traps in MOS high-temperature postirradiation annealing response
    • This Conference
    • D.M. Fleetwood, M.R. Shaneyfelt, L.C. Riewe, P.S. Winokur, and R.A. Reber, Jr., “The role of border traps in MOS high-temperature postirradiation annealing response.” This Conference.
    • Fleetwood, D.M.1    Shaneyfelt, M.R.2    Riewe, L.C.3    Winokur, P.S.4    Reber, R.A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.