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Positive charge generation in metal-oxide-semiconductor capacitors
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L.P. Trombetta (Private Communication).
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Trombetta, L.P.1
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An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors
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L.P. Trombetta, G.J. Gerardi, D.J. DiMaria, and E. Tierney, “An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors,” J. Appl. Phys. 64, (5), 2434, Sept. 1988.
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Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
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Buchanan, D.A.1
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A comparison of positive charge generation in high field stressing and ionizing radiation on MOS structures
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Warren, W.L.1
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Physical mechanisms contributing to device rebound
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Reversibility of trapped hole annealing
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Lelis, A.J.1
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The nature of the trapped hole annealing process
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Lelis, A.J.1
Oldham, T.R.2
Boesch, H.E.3
McLean, F.B.4
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9
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0022247785
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Defect production in SiO2 by x-ray and Co-60 radiations
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0007240288
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Growth and annealing of trapped holes and interface states using time dependent biases
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Oldham, T.R.1
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14
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Hole traps and trivalent silicon centers in metal/oxide/silicon devices
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Lenahan, P.M.1
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15
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Effects of introducing H2 into irradiated MOSFET's from room temperature to 250 C
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Ed. R.C. Helms and B.E. Deal, Plenum Press
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R.E. Stahlbush, and A.H. Edwards, “Effects of introducing H2 into irradiated MOSFET's from room temperature to 250 C,” The Physics and Chemistry of SiO2 and the Si/SiO2 interface, Ed. R.C. Helms and B.E. Deal, Plenum Press, 1992
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The Physics and Chemistry of SiO2 and the Si/SiO2 interface
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Stahlbush, R.E.1
Edwards, A.H.2
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16
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84939383681
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The role of border traps in MOS high-temperature postirradiation annealing response
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This Conference
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D.M. Fleetwood, M.R. Shaneyfelt, L.C. Riewe, P.S. Winokur, and R.A. Reber, Jr., “The role of border traps in MOS high-temperature postirradiation annealing response.” This Conference.
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Fleetwood, D.M.1
Shaneyfelt, M.R.2
Riewe, L.C.3
Winokur, P.S.4
Reber, R.A.5
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