ELECTRICAL PROPERTIES OF NITRIDED-OXIDE SYSTEMS FOR USE IN GATE DIELECTRICS AND EEPROM.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1983, Pages 190-193

  Lai, S K ^a   Lee, J ^a   Dham, V K ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE AND I-V CURVES; ELECTRON TRAPPING; HIGH FIELD ENDURANCE; HIGH FIELD ENDURANCE AND PROCESS CONDITIONS; SAMPLE PREPARATION; TRAP GENERATION AND NITRIDATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0020909751     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1983.190473     Document Type: Conference Paper

References (0)