Relationship between mobility and residual-mechanical-stress as measured by Raman spectroscopy for nitrided-oxide-gate MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 65-68

  Momose, Hisayo Sasaki ^a   Morimoto, Toyota ^a   Yamabe, Kikuo ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; SEMICONDUCTING SILICON; SPECTROSCOPY, RAMAN;

NITRIDED-OXIDE FILMS; TRANSCONDUCTANCE; WAFERS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025574984     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)