High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga2O3 using a GaN buffer layer

Scientific Reports

Volumn 6, Issue , 2016, Pages

  Muhammed, M M ^a   Roldan, M A ^a   Yamashita, Y ^b   Sahonta, S L ^c   Ajia, I A ^a   Iizuka, K ^b   Kuramata, A ^b   Humphreys, C J ^c   Roqan, I S ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b TAMURA CORPORATION   (Japan)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84978726774     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep29747     Document Type: Article

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