SCOPUS 정보 검색 플랫폼

Volumn 546, Issue , 2013, Pages 104-107

Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate

(10) Wan, Zhixin a He, Yinsheng a Choi, Cheljong b Suh, Eunkyung b Yu, Young Moon c Yi, Sam Nyung d Ahn, Hyung Soo d Yang, Min d Lee, Hyo Jong e Shin, Keesam a

a Changwon National University (South Korea)

b Chonbuk National University (South Korea)

c Pukyong National University (South Korea)

d Korea Maritime University (South Korea)

e Dong A University (South Korea)

Author keywords

Gallium nitride; Indium gallium nitride; Metal organic chemical vapor deposition; Microstructure; Multi quantum wells; Transmission electron microscopy

Indexed keywords

CHEMICAL ANALYSIS; DEPOSITION; EDGE DISLOCATIONS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SURFACE DEFECTS; TELECOMMUNICATION REPEATERS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

DENSITY OF DISLOCATION; DISLOCATION DENSITIES; INDIUM GALLIUM NITRIDE; METAL ORGANIC; MICROSTRUCTURAL ANALYSIS; MULTI QUANTUM WELLS; PATTERNED SAPPHIRE SUBSTRATE; THREADING DISLOCATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84885329662 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.05.111 Document Type: Conference Paper

Times cited : (4)

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