β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3 potential for next generation of power devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8987, Issue , 2014, Pages

  Víllora, Encarnación G ^a   Arjoca, Stelian ^a,b   Shimamura, Kiyoshi ^a,b   Inomata, Daisuke ^c   Aoki, Kazuo ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c Koha Co Ltd   (Japan)

Author keywords

GaN heteroepitaxy; High brightness white LEDs; High power devices; Single crystal phosphors

Indexed keywords

ELECTRIC EQUIPMENT; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINANCE; PHOSPHORS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SINGLE CRYSTALS;

HETEROEPITAXIAL DEPOSITION; HIGH-CRYSTALLINE QUALITY; HIGH-POWER DEVICES; INTERNAL QUANTUM EFFICIENCY; SEMICONDUCTOR APPLICATIONS; TEMPERATURE INCREASE; TRANSPARENT CONDUCTIVE OXIDES; WHITE LED;

GALLIUM ALLOYS;

EID: 84901748928     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2039305     Document Type: Conference Paper

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