Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 624-629

  Alam, Jahangir ^a   Bathe, Ravi ^b   Vispute, R D ^b   Zavada, John M ^c   Litton, Cole W ^d   Iliadis, Agis A ^e   Noor Mohammad, S ^a  

^a School of Engineering   (United States)

^b Bldg 142   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL EFFECT; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; STRAIN; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BLUESHIFTS; DOPING CONCENTRATION; EXCITATION ENERGIES; HYDROSTATIC STRAIN; OPTICAL ENERGY SHIFTS; PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 2342486066     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1667509     Document Type: Article

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