High optical and structural quality of GaN epilayers grown on (2 ̄ 01) β-Ga2O3

Applied Physics Letters

Volumn 105, Issue 4, 2014, Pages

  Muhammed, M M ^a   Peres, M ^b   Yamashita, Y ^c   Morishima, Y ^c   Sato, S ^c   Franco, N ^b   Lorenz, K ^b   Kuramata, A ^c   Roqan, I S ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c TAMURA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; LATTICE MISMATCH; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

ALTERNATIVE SUBSTRATES; EPITAXIAL ORIENTATION RELATIONSHIP; LARGE LATTICE MISMATCH; PHOTOLUMINESCENCE SPECTRUM; THERMAL AND ELECTRICAL PROPERTIES; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; X-RAY DIFFRACTION STUDIES;

GALLIUM ALLOYS;

EID: 84905390525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4891761     Document Type: Article

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