Broadening of near-band-gap photoluminescence in n-GaN films

Applied Physics Letters

Volumn 73, Issue 3, 1998, Pages 375-377

  Iliopoulos, E ^a   Doppalapudi, D ^a   Ng, H M ^a   Moustakas, T D ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21944451158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121839     Document Type: Article

References (12)

1. B. A. Monemar, in Gallium Nitride (GaN) I, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, CA, 1998), pp. 311-334.
2. T. N. Morgan, Phys. Rev. 139, A343 (1965).
3. T. D. Moustakas, in Gallium Nitride and Related Materials, Mater. Res. Soc. Symp. Proc. 395, edited by, F. A. Ponce, R. D. Dupuis, S. Nakamura, J. A. Edmond, (MRS, Pittsburgh, PA 1997), pp. 111-122.
4. T. D. Moustakas, R. Molnar, T. Lei, G. Menon, and C. R. Eddy, in Wide Band Gap Semiconductors, Mater. Res. Soc. Symp. Proc. 242, edited by, T. D. Moustakas, J. I. Pankove, Y. Hamakawa, (MRS, Pittsburgh, PA, 1992), pp. 427-432.
5. J. D. De-Sheng, Y. Makita, K. Ploog, and H. J. Queisser, J. Appl. Phys. 53, 999 (1982).
6. V. A. Vilkotskii, D. S. Domanevskii, R. D. Kakanakov, V. V. Krasovskii, and V. D. Tkachev, Phys. Status Solidi A 91, 71 (1979).
7. S. M. Ryvkin, Phys. Status Solidi 11, 285 (1965).
8. The density of states function for band tails in a semiconductor has a Gaussian form. Thus, the lower energy line shape of the photoluminescence due to direct transitions between the conduction and valence band tails is expected to be Gaussian. Furthermore, the width of the photoluminescence line is proportional to the second moment of the Gaussian density of states function, which has a slower dependence on impurity concentration than a 2/3 power.
9. G. D. Mahan, Phys. Rev. 153, 882 (1967).
10. C. F. Klingshirn, Semiconductor Optics (Springer, Berlin, 1997), p. 307.
11. N. G. Weinmann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).
12. E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, Appl. Phys. Lett. 71, 921 (1997).