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Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 11, 2013, Pages 4471-4481

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

(6) Arslan, Engin a Ozturk, Mustafa K b Çakmak, Huseyin a Demirel, Pakize a Özçelik, Süleyman b Ozbay, Ekmel a

a BILKENT UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION CHANGE; DISLOCATION DENSITIES; EDGE AND SCREW DISLOCATIONS; HETEROGENEOUS STRAIN; HIGH-RESOLUTION X-RAY DIFFRACTION; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; RECIPROCAL LATTICE MAPPING; SAPPHIRE SUBSTRATES;

EPILAYERS; GALLIUM ALLOYS; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84887052187 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-013-1427-4 Document Type: Article

Times cited : (15)

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