Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H-SiC by metal-organic chemical vapor deposition

Superlattices and Microstructures

Volumn 85, Issue , 2015, Pages 482-487

  Tao, Pengcheng ^a   Liang, Hongwei ^a   Xia, Xiaochuan ^a   Liu, Yang ^a   Jiang, Jianhua ^d   Huang, Huishi ^d   Feng, Qiuju ^c   Shen, Rensheng ^a   Luo, Yingmin ^a   Du, Guotong ^a,b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

^c LIAONING NORMAL UNIVERSITY   (China)

^d Jiangsu Xinguanglian Technology Co Ltd   (China)

Author keywords

Distributed Bragg reflector; Silicon carbide; SiNx< inf> interlayer; Ultraviolet light emitting diode

Indexed keywords

BRAGG REFLECTORS; DEPOSITION; DISTRIBUTED BRAGG REFLECTORS; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; REFLECTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SILICON NITRIDE;

CRYSTALLINE QUALITY; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; LIGHT OUTPUT POWER; NEAR ULTRAVIOLET; NEAR-ULTRAVIOLET LED; THREADING DISLOCATION DENSITIES; ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 84935915901     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2015.05.035     Document Type: Article

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