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Volumn 75, Issue 6, 1999, Pages 838-840

Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000209540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124530     Document Type: Article
Times cited : (55)

References (24)
  • 21
    • 77956895485 scopus 로고
    • edited by F. Seitz and D. Turnbull Academic, New York
    • D. Dexter, in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1958), Vol. 6, p. 353.
    • (1958) Solid State Physics , vol.6 , pp. 353
    • Dexter, D.1
  • 24
    • 85034144868 scopus 로고    scopus 로고
    • private communication
    • B. Monemar (private communication). The measurement was performed on a sample from the edge of the wafer, which has lower mobility. The excitation wavelength was 266 nm and the average power 26 mW. The data are fitted with a single exponential decay for over 1.5 ns. The temperature was 2 K.
    • Monemar, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.