메뉴 건너뛰기




Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 320-327

Defect reduction in sublimation grown SiC bulk crystals

Author keywords

Basal plane dislocations; Bulk growth; Dislocation; Low angle grain boundaries; Micropipes; Numerical simulation; Schottky diode; SiC; Slip systems

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

EID: 33845190090     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.007     Document Type: Article
Times cited : (30)

References (18)
  • 8
    • 33845192755 scopus 로고    scopus 로고
    • E. Emorhokpor, E. Carlson, J. Wan, A. Weber, C. Basceri, J. Jenny, R. Sandhu, J. Oliver, F. Burkeen, A. Somanchi, V. Velidandla, F. Orazio, A. Blew, M. Goorsky, M. Dudley, W.M. Vetter, poster @ ICSCRM05 (in press)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.