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Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 320-327
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Defect reduction in sublimation grown SiC bulk crystals
a
SICRYSTAL AG
(Germany)
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Author keywords
Basal plane dislocations; Bulk growth; Dislocation; Low angle grain boundaries; Micropipes; Numerical simulation; Schottky diode; SiC; Slip systems
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
DISLOCATIONS (CRYSTALS);
GRAIN BOUNDARIES;
PARAMETER ESTIMATION;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
X RAY DIFFRACTION ANALYSIS;
BASAL PLANE DISLOCATIONS;
BULK GROWTH;
LOW ANGLE GRAIN BOUNDARIES;
MICROPIPES;
SLIP SYSTEMS;
CRYSTALS;
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EID: 33845190090
PISSN: 07496036
EISSN: 10963677
Source Type: Journal
DOI: 10.1016/j.spmi.2006.06.007 Document Type: Article |
Times cited : (30)
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References (18)
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