Demonstration of GaN/InGaN light emitting diodes on (100) β-Ga 2O3 substrates by metalorganic chemical vapour deposition

Chinese Physics Letters

Volumn 25, Issue 6, 2008, Pages 2185-2186

  Xie, Zi Li ^a   Zhang, Rong ^a   Xia, Chang Tai ^b   Xiu, Xiang Qian ^a   Han, Ping ^a   Liu, Bin ^a   Zhao, Hong ^a   Jiang, Ruo Lian ^a   Shi, Yi ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION;

GAN BUFFER LAYERS; GAN MATERIAL; GAN/INGAN; HIGH QUALITY; LIGHTEMITTING DIODE; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; QUANTUM WELL LIGHT EMITTING DIODES; SINGLE-CRYSTAL SUBSTRATES; SPECTRA'S; VAPOR-DEPOSITION TECHNIQUES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 46749092965     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/6/071     Document Type: Article

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