Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Shih, Huan Yu ^a   Shiojiri, Makoto ^b   Chen, Ching Hsiang ^c   Yu, Sheng Fu ^d   Ko, Chung Ting ^a   Yang, Jer Ren ^a   Lin, Ray Ming ^d   Chen, Miin Jang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84940862281     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep13671     Document Type: Article

References (37)

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