Growth of GaN and AlGaN on (100) β-Ga 2O 3 substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 519-522

  Ito, Shun ^a   Takeda, Kenichiro ^a   Nagata, Kengo ^a   Aoshima, Hiroki ^a   Takehara, Kosuke ^a   Iwaya, Motoaki ^a   Takeuchi, Tetsuya ^a   Kamiyama, Satoshi ^a   Akasaki, Isamu ^a,b   Amano, Hiroshi ^b  

^a MEIJO UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Ga 2O 3(100); AlGaN; GaN; MOVPE; Thermal annealing

Indexed keywords

ALGAN; CRYSTALLINE QUALITY; GAN; GROWTH METHOD; GROWTH OF GAN; LOW TEMPERATURE BUFFER LAYERS; NITROGEN AMBIENT; SAPPHIRE SUBSTRATES; THERMAL-ANNEALING; ULTRA-VIOLET; VERTICAL-TYPE;

CRYSTALLINE MATERIALS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; QUALITY CONTROL; SAPPHIRE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 84858839266     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100499     Document Type: Article

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