Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0 0 0 1)

Journal of Crystal Growth

Volumn 308, Issue 2, 2007, Pages 321-324

  Song, Jae Chul ^a   Lee, Seon Ho ^a   Lee, In Hwan ^a   Seol, Kyeong Won ^a   Kannappan, Santhakumar ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. Optical reflectance; A1. Threading dislocation; A3. Metal organic chemical vapor deposition (MOCVD); B1. GaN; B1. Patterned sapphire substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

DISLOCATION DENSITY; OPTICAL REFLECTANCE; PATTERNED SAPPHIRE SUBSTRATE; THREADING DISLOCATION;

EPILAYERS;

EID: 35348912505     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.08.030     Document Type: Article

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