Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 177-182

  Wang, T ^a,b   Liu, Y H ^a   Lee, Y B ^a   Izumi, Y ^a   Ao, J P ^a   Bai, J ^a   Li, H D ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Nitride Semiconductors Co Ltd   (Japan)

Author keywords

A1. Crystal structure; B1. Nitrides; B1. Sapphire; B3. Light emitting diode

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY;

LIGHT EMITTING DIODES;

EID: 0036467193     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01918-2     Document Type: Article

References (7)