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Journal of Crystal Growth

Volumn 394, Issue , 2014, Pages 7-10

Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays

(7) Zhang, Yonghui a Wei, Tongbo a Wang, Junxi a Fan, Chao a Chen, Yu a Hu, Qiang a Li, Jinmin a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A3. Nanoscaled epitaxial lateral overgrowth (NELOG); B1. GaN; B1. Patterned sapphire substrate (PSS); B2. Light emitting diode (LED)

Indexed keywords

EID: 84894805357 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2014.02.011 Document Type: Article

Times cited : (6)

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