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Volumn 210, Issue , 2015, Pages 42-55

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

Author keywords

Boron nitride; Graphene; Hanle precession; Review; Spin transport

Indexed keywords

BORON NITRIDE; CARRIER MOBILITY; ELECTRODES; GRAPHENE; III-V SEMICONDUCTORS; MAGNESIA; REVIEWS; TRANSPORT PROPERTIES;

EID: 84952864240     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2015.07.007     Document Type: Article
Times cited : (14)

References (146)
  • 2
    • 2942610744 scopus 로고    scopus 로고
    • Spintronics: Fundamentals and applications
    • I. Žutić, J. Fabian, and S. Das Sarma Spintronics: fundamentals and applications Rev. Mod. Phys. 76 2004 323 410 10.1103/RevModPhys.76.323
    • (2004) Rev. Mod. Phys. , vol.76 , pp. 323-410
    • Žutić, I.1    Fabian, J.2    Das Sarma, S.3
  • 6
    • 84907253099 scopus 로고    scopus 로고
    • Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
    • M.H.D. Guimarães, P.J. Zomer, J. Ingla-Aynés, J.C. Brant, N. Tombros, and B.J. van Wees Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field Phys. Rev. Lett. 113 2014 086602 10.1103/PhysRevLett.113.086602
    • (2014) Phys. Rev. Lett. , vol.113 , pp. 086602
    • Guimarães, M.H.D.1    Zomer, P.J.2    Ingla-Aynés, J.3    Brant, J.C.4    Tombros, N.5    Van Wees, B.J.6
  • 7
    • 84860178637 scopus 로고    scopus 로고
    • Silicon spintronics
    • R. Jansen Silicon spintronics Nat. Mater. 11 5 2012 400 408 10.1038/nmat3293
    • (2012) Nat. Mater. , vol.11 , Issue.5 , pp. 400-408
    • Jansen, R.1
  • 8
    • 77955304416 scopus 로고    scopus 로고
    • Spin dynamics in semiconductors
    • M. Wu, J. Jiang, and M. Weng Spin dynamics in semiconductors Phys. Rep. 493 2-4 2010 61 236 10.1016/j.physrep.2010.04.002
    • (2010) Phys. Rep. , vol.493 , Issue.2-4 , pp. 61-236
    • Wu, M.1    Jiang, J.2    Weng, M.3
  • 11
    • 84860153027 scopus 로고    scopus 로고
    • Spintronics and pseudospintronics in graphene and topological insulators
    • D. Pesin, and A.H. MacDonald Spintronics and pseudospintronics in graphene and topological insulators Nat. Mater. 11 5 2012 409 416 10.1038/nmat3305
    • (2012) Nat. Mater. , vol.11 , Issue.5 , pp. 409-416
    • Pesin, D.1    MacDonald, A.H.2
  • 12
    • 69949133038 scopus 로고    scopus 로고
    • Electron spin relaxation in graphene: The role of the substrate
    • C. Ertler, S. Konschuh, M. Gmitra, and J. Fabian Electron spin relaxation in graphene: the role of the substrate Phys. Rev. B 80 4 2009 041405 10.1103/PhysRevB.80.041405
    • (2009) Phys. Rev. B , vol.80 , Issue.4 , pp. 041405
    • Ertler, C.1    Konschuh, S.2    Gmitra, M.3    Fabian, J.4
  • 13
    • 34547635051 scopus 로고    scopus 로고
    • Electronic spin transport and spin precession in single graphene layers at room temperature
    • N. Tombros, C. Jozsa, M. Popinciuc, H.T. Jonkman, and B.J. van Wees Electronic spin transport and spin precession in single graphene layers at room temperature Nature 448 7153 2007 571 574 10.1038/nature06037
    • (2007) Nature , vol.448 , Issue.7153 , pp. 571-574
    • Tombros, N.1    Jozsa, C.2    Popinciuc, M.3    Jonkman, H.T.4    Van Wees, B.J.5
  • 17
    • 84869061768 scopus 로고    scopus 로고
    • Long-distance spin transport in high-mobility graphene on hexagonal boron nitride
    • P.J. Zomer, M.H.D. Guimarães, N. Tombros, and B.J. van Wees Long-distance spin transport in high-mobility graphene on hexagonal boron nitride Phys. Rev. B 86 2012 161416 10.1103/PhysRevB.86.161416
    • (2012) Phys. Rev. B , vol.86 , pp. 161416
    • Zomer, P.J.1    Guimarães, M.H.D.2    Tombros, N.3    Van Wees, B.J.4
  • 19
    • 66749172229 scopus 로고    scopus 로고
    • Electrical detection of spin precession in single layer graphene spin valves with transparent contacts
    • W. Han, K. Pi, W. Bao, K.M. McCreary, Y. Li, W.H. Wang, C.N. Lau, and R.K. Kawakami Electrical detection of spin precession in single layer graphene spin valves with transparent contacts Appl. Phys. Lett. 94 22 2009 222109 10.1063/1.3147203
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.22 , pp. 222109
    • Han, W.1    Pi, K.2    Bao, W.3    McCreary, K.M.4    Li, Y.5    Wang, W.H.6    Lau, C.N.7    Kawakami, R.K.8
  • 21
    • 77952080596 scopus 로고    scopus 로고
    • Manipulation of spin transport in graphene by surface chemical doping
    • K. Pi, W. Han, K.M. McCreary, A.G. Swartz, Y. Li, and R.K. Kawakami Manipulation of spin transport in graphene by surface chemical doping Phys. Rev. Lett. 104 18 2010 187201 10.1103/PhysRevLett.104.187201
    • (2010) Phys. Rev. Lett. , vol.104 , Issue.18 , pp. 187201
    • Pi, K.1    Han, W.2    McCreary, K.M.3    Swartz, A.G.4    Li, Y.5    Kawakami, R.K.6
  • 28
    • 80052410880 scopus 로고    scopus 로고
    • Spin relaxation properties in graphene due to its linear dispersion
    • S. Jo, D.-K. Ki, D. Jeong, H.-J. Lee, and S. Kettemann Spin relaxation properties in graphene due to its linear dispersion Phys. Rev. B 84 2011 075453 10.1103/PhysRevB.84.075453
    • (2011) Phys. Rev. B , vol.84 , pp. 075453
    • Jo, S.1    Ki, D.-K.2    Jeong, D.3    Lee, H.-J.4    Kettemann, S.5
  • 31
    • 84872047084 scopus 로고    scopus 로고
    • Electrical detection of spin precession in freely suspended graphene spin valves on cross-linked poly(methyl methacrylate)
    • I. Neumann, J. Van de Vondel, G. Bridoux, M.V. Costache, F. Alzina, C.M.S. Torres, and S.O. Valenzuela Electrical detection of spin precession in freely suspended graphene spin valves on cross-linked poly(methyl methacrylate) Small 9 1 2013 156 160 10.1002/smll.201201194
    • (2013) Small , vol.9 , Issue.1 , pp. 156-160
    • Neumann, I.1    Van De Vondel, J.2    Bridoux, G.3    Costache, M.V.4    Alzina, F.5    Torres, C.M.S.6    Valenzuela, S.O.7
  • 33
    • 84906706985 scopus 로고    scopus 로고
    • Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride
    • M.V. Kamalakar, A. Dankert, J. Bergsten, T. Ive, and S.P. Dash Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride Sci. Rep. 4 2014 10.1038/srep06146
    • (2014) Sci. Rep. , vol.4
    • Kamalakar, M.V.1    Dankert, A.2    Bergsten, J.3    Ive, T.4    Dash, S.P.5
  • 34
    • 84927139199 scopus 로고    scopus 로고
    • Long distance spin communication in chemical vapour deposited graphene
    • M.V. Kamalakar, C. Groenveld, A. Dankert, and S.P. Dash Long distance spin communication in chemical vapour deposited graphene Nat. Commun. 6 2015 10.1038/ncomms7766
    • (2015) Nat. Commun. , vol.6
    • Kamalakar, M.V.1    Groenveld, C.2    Dankert, A.3    Dash, S.P.4
  • 35
    • 84906542761 scopus 로고    scopus 로고
    • Large-scale fabrication of BN tunnel barriers for graphene spintronics
    • W. Fu, P. Makk, R. Maurand, M. Bräuninger, and C. Schönenberger Large-scale fabrication of BN tunnel barriers for graphene spintronics J. Appl. Phys. 116 7 2014 10.1063/1.4893578
    • (2014) J. Appl. Phys. , vol.116 , Issue.7
    • Fu, W.1    Makk, P.2    Maurand, R.3    Bräuninger, M.4    Schönenberger, C.5
  • 36
    • 84906542761 scopus 로고    scopus 로고
    • Large-scale fabrication of bn tunnel barriers for graphene spintronics
    • W. Fu, P. Makk, R. Maurand, M. Bräuninger, and C. Schönenberger Large-scale fabrication of bn tunnel barriers for graphene spintronics J. Appl. Phys. 116 7 2014 10.1063/1.4893578
    • (2014) J. Appl. Phys. , vol.116 , Issue.7
    • Fu, W.1    Makk, P.2    Maurand, R.3    Bräuninger, M.4    Schönenberger, C.5
  • 37
    • 84906250971 scopus 로고    scopus 로고
    • Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier
    • K. Komatsu, S. Kasai, S.-L. Li, S. Nakaharai, N. Mitoma, M. Yamamoto, and K. Tsukagoshi Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier Appl. Phys. Express 7 8 2014 085101 http://stacks.iop.org/1882-0786/7/i=8/a=085101
    • (2014) Appl. Phys. Express , vol.7 , Issue.8 , pp. 085101
    • Komatsu, K.1    Kasai, S.2    Li, S.-L.3    Nakaharai, S.4    Mitoma, N.5    Yamamoto, M.6    Tsukagoshi, K.7
  • 39
    • 84938151050 scopus 로고    scopus 로고
    • Hydrogenated graphene as a homoepitaxial tunnel barrier for spin and charge transport in graphene
    • A.L. Friedman, O.M.J. van't Erve, J.T. Robinson, K.E. Whitener, and B.T. Jonker Hydrogenated graphene as a homoepitaxial tunnel barrier for spin and charge transport in graphene ACS Nano 2015 10.1021/acsnano.5b02795
    • (2015) ACS Nano
    • Friedman, A.L.1    Van'T Erve, O.M.J.2    Robinson, J.T.3    Whitener, K.E.4    Jonker, B.T.5
  • 40
    • 84897854502 scopus 로고    scopus 로고
    • Spin relaxation mechanism in graphene: Resonant scattering by magnetic impurities
    • D. Kochan, M. Gmitra, and J. Fabian Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities Phys. Rev. Lett. 112 2014 116602 10.1103/PhysRevLett.112.116602
    • (2014) Phys. Rev. Lett. , vol.112 , pp. 116602
    • Kochan, D.1    Gmitra, M.2    Fabian, J.3
  • 41
    • 84908566671 scopus 로고    scopus 로고
    • Pseudospin-driven spin relaxation mechanism in graphene
    • D.V. Tuan, F. Ortmann, D. Soriano, S.O. Valenzuela, and S. Roche Pseudospin-driven spin relaxation mechanism in graphene Nat. Phys. 10 11 2014 857 863 10.1038/nphys3083
    • (2014) Nat. Phys. , vol.10 , Issue.11 , pp. 857-863
    • Tuan, D.V.1    Ortmann, F.2    Soriano, D.3    Valenzuela, S.O.4    Roche, S.5
  • 43
    • 84899477711 scopus 로고    scopus 로고
    • Spin lifetime of itinerant electrons in chemically synthesized graphene multi-layers
    • B. Náfrádi, M. Choucair, and L. Forró Spin lifetime of itinerant electrons in chemically synthesized graphene multi-layers Carbon 74 0 2014 346 351 http://www.sciencedirect.com/science/article/pii/S0008622314003030
    • (2014) Carbon , vol.74 , pp. 346-351
    • Náfrádi, B.1    Choucair, M.2    Forró, L.3
  • 46
    • 84904610577 scopus 로고    scopus 로고
    • All-electrical time-resolved spin generation and spin manipulation in n-InGaAs
    • I. Stepanov, S. Kuhlen, M. Ersfeld, M. Lepsa, and B. Beschoten All-electrical time-resolved spin generation and spin manipulation in n-InGaAs Appl. Phys. Lett. 104 6 2014 10.1063/1.4864468
    • (2014) Appl. Phys. Lett. , vol.104 , Issue.6
    • Stepanov, I.1    Kuhlen, S.2    Ersfeld, M.3    Lepsa, M.4    Beschoten, B.5
  • 48
    • 84870405460 scopus 로고    scopus 로고
    • Integration of the ferromagnetic insulator EuO onto graphene
    • A.G. Swartz, P.M. Odenthal, Y. Hao, R.S. Ruoff, and R.K. Kawakami Integration of the ferromagnetic insulator EuO onto graphene ACS Nano 6 11 2012 10063 10069 10.1021/nn303771f
    • (2012) ACS Nano , vol.6 , Issue.11 , pp. 10063-10069
    • Swartz, A.G.1    Odenthal, P.M.2    Hao, Y.3    Ruoff, R.S.4    Kawakami, R.K.5
  • 49
    • 84877585311 scopus 로고    scopus 로고
    • Colossal enhancement of spin-orbit coupling in weakly hydrogenated graphene
    • J. Balakrishnan, G. Kok Wai Koon, M. Jaiswal, A.H. Castro Neto, and B. Ozyilmaz Colossal enhancement of spin-orbit coupling in weakly hydrogenated graphene Nat. Phys. 9 5 2013 284 287 10.1038/nphys2576
    • (2013) Nat. Phys. , vol.9 , Issue.5 , pp. 284-287
    • Balakrishnan, J.1    Kok Wai Koon, G.2    Jaiswal, M.3    Castro Neto, A.H.4    Ozyilmaz, B.5
  • 52
    • 84863975395 scopus 로고    scopus 로고
    • Enhancement of spin injection from ferromagnet to graphene with a Cu interfacial layer
    • C. Zhang, Y. Wang, B. Wu, and Y. Wu Enhancement of spin injection from ferromagnet to graphene with a Cu interfacial layer Appl. Phys. Lett. 101 2 2012 10.1063/1.4733729
    • (2012) Appl. Phys. Lett. , vol.101 , Issue.2
    • Zhang, C.1    Wang, Y.2    Wu, B.3    Wu, Y.4
  • 53
    • 84884243581 scopus 로고    scopus 로고
    • Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
    • I. Neumann, M.V. Costache, G. Bridoux, J.F. Sierra, and S.O. Valenzuela Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers Appl. Phys. Lett. 103 11 2013 10.1063/1.4820586
    • (2013) Appl. Phys. Lett. , vol.103 , Issue.11
    • Neumann, I.1    Costache, M.V.2    Bridoux, G.3    Sierra, J.F.4    Valenzuela, S.O.5
  • 54
    • 84893011397 scopus 로고    scopus 로고
    • Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport
    • A.L. Friedman, O.M.J. van't Erve, C.H. Li, J.T. Robinson, and B.T. Jonker Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport Nat. Commun. 5 2014 10.1038/ncomms4161
    • (2014) Nat. Commun. , vol.5
    • Friedman, A.L.1    Van'T Erve, O.M.J.2    Li, C.H.3    Robinson, J.T.4    Jonker, B.T.5
  • 55
    • 84871101996 scopus 로고    scopus 로고
    • Contact-induced spin relaxation in Hanle spin precession measurements
    • T. Maassen, I.J. Vera-Marun, M.H.D. Guimarães, and B.J. van Wees Contact-induced spin relaxation in Hanle spin precession measurements Phys. Rev. B 86 2012 235408 10.1103/PhysRevB.86.235408
    • (2012) Phys. Rev. B , vol.86 , pp. 235408
    • Maassen, T.1    Vera-Marun, I.J.2    Guimarães, M.H.D.3    Van Wees, B.J.4
  • 56
    • 0030205441 scopus 로고    scopus 로고
    • Crosslinked pmma as a high-resolution negative resist for electron beam lithography and applications for physics of low-dimensional structures
    • I. Zailer, J.E.F. Frost, V. Chabasseur-Molyneux, C.J.B. Ford, and M. Pepper Crosslinked pmma as a high-resolution negative resist for electron beam lithography and applications for physics of low-dimensional structures Semicond. Sci. Technol. 11 8 1996 1235 http://stacks.iop.org/0268-1242/11/i=8/a=021
    • (1996) Semicond. Sci. Technol. , vol.11 , Issue.8 , pp. 1235
    • Zailer, I.1    Frost, J.E.F.2    Chabasseur-Molyneux, V.3    Ford, C.J.B.4    Pepper, M.5
  • 57
    • 58149483882 scopus 로고    scopus 로고
    • Modification of graphene properties due to electron-beam irradiation
    • D. Teweldebrhan, and A.A. Balandin Modification of graphene properties due to electron-beam irradiation Appl. Phys. Lett. 94 1 2009 013101 10.1063/1.3062851
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.1 , pp. 013101
    • Teweldebrhan, D.1    Balandin, A.A.2
  • 60
    • 84859594108 scopus 로고    scopus 로고
    • Interaction of metals with suspended graphene observed by transmission electron microscopy
    • R. Zan, U. Bangert, Q. Ramasse, and K.S. Novoselov Interaction of metals with suspended graphene observed by transmission electron microscopy J. Phys. Chem. Lett. 3 7 2012 953 958 10.1021/jz201653g
    • (2012) J. Phys. Chem. Lett. , vol.3 , Issue.7 , pp. 953-958
    • Zan, R.1    Bangert, U.2    Ramasse, Q.3    Novoselov, K.S.4
  • 61
    • 84864710503 scopus 로고    scopus 로고
    • Si-compatible cleaning process for graphene using low-density inductively coupled plasma
    • Y.-D. Lim, D.-Y. Lee, T.-Z. Shen, C.-H. Ra, J.-Y. Choi, and W.J. Yoo Si-compatible cleaning process for graphene using low-density inductively coupled plasma ACS Nano 6 5 2012 4410 4417 10.1021/nn301093h
    • (2012) ACS Nano , vol.6 , Issue.5 , pp. 4410-4417
    • Lim, Y.-D.1    Lee, D.-Y.2    Shen, T.-Z.3    Ra, C.-H.4    Choi, J.-Y.5    Yoo, W.J.6
  • 65
    • 70349925823 scopus 로고    scopus 로고
    • Wettability and surface free energy of graphene films
    • S. Wang, Y. Zhang, N. Abidi, and L. Cabrales Wettability and surface free energy of graphene films Langmuir 25 18 2009 11078 11081 10.1021/la901402f
    • (2009) Langmuir , vol.25 , Issue.18 , pp. 11078-11081
    • Wang, S.1    Zhang, Y.2    Abidi, N.3    Cabrales, L.4
  • 66
    • 79952603040 scopus 로고    scopus 로고
    • Metal-graphene interaction studied via atomic resolution scanning transmission electron microscopy
    • R. Zan, U. Bangert, Q. Ramasse, and K.S. Novoselov Metal-graphene interaction studied via atomic resolution scanning transmission electron microscopy Nano Lett. 11 3 2011 1087 1092 10.1021/nl103980h
    • (2011) Nano Lett. , vol.11 , Issue.3 , pp. 1087-1092
    • Zan, R.1    Bangert, U.2    Ramasse, Q.3    Novoselov, K.S.4
  • 74
    • 83455172686 scopus 로고    scopus 로고
    • A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
    • P.J. Zomer, S.P. Dash, N. Tombros, and B.J. van Wees A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride Phys. Rev. Lett. 99 2011 232104 http://apl.aip.org/resource/1/applab/v99/i23/p232104-s1
    • (2011) Phys. Rev. Lett. , vol.99 , pp. 232104
    • Zomer, P.J.1    Dash, S.P.2    Tombros, N.3    Van Wees, B.J.4
  • 75
    • 84907339308 scopus 로고    scopus 로고
    • Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
    • P.J. Zomer, M.H.D. Guimarães, J.C. Brant, N. Tombros, and B.J. van Wees Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride Appl. Phys. Lett. 105 1 2014 10.1063/1.4886096
    • (2014) Appl. Phys. Lett. , vol.105 , Issue.1
    • Zomer, P.J.1    Guimarães, M.H.D.2    Brant, J.C.3    Tombros, N.4    Van Wees, B.J.5
  • 78
    • 84881167566 scopus 로고    scopus 로고
    • Van der waals heterostructures
    • A.K. Geim, and I.V. Grigorieva Van der waals heterostructures Nature 499 7459 2013 419 425 10.1038/nature12385
    • (2013) Nature , vol.499 , Issue.7459 , pp. 419-425
    • Geim, A.K.1    Grigorieva, I.V.2
  • 79
    • 10044225881 scopus 로고    scopus 로고
    • Giant tunnelling magnetoresistance at room temperature with MgO (1 0 0) tunnel barriers
    • S.S.P. Parkin, C. Kaiser, A. Panchula, P.M. Rice, B. Hughes, M. Samant, and S.-H. Yang Giant tunnelling magnetoresistance at room temperature with MgO (1 0 0) tunnel barriers Nat. Mater. 3 12 2004 862 867 10.1038/nmat1256
    • (2004) Nat. Mater. , vol.3 , Issue.12 , pp. 862-867
    • Parkin, S.S.P.1    Kaiser, C.2    Panchula, A.3    Rice, P.M.4    Hughes, B.5    Samant, M.6    Yang, S.-H.7
  • 80
    • 36549079990 scopus 로고    scopus 로고
    • Effects of a thin mg layer on the structural and magnetoresistance properties of CoFeB/MgO/CoFeB magnetic tunnel junctions
    • Y. Lu, C. Deranlot, A. Vaures, F. Petroff, J.-M. George, Y. Zheng, and D. Demailles Effects of a thin mg layer on the structural and magnetoresistance properties of CoFeB/MgO/CoFeB magnetic tunnel junctions Appl. Phys. Lett. 91 22 2007 222504 222513 10.1063/1.2819530
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.22 , pp. 222504-222513
    • Lu, Y.1    Deranlot, C.2    Vaures, A.3    Petroff, F.4    George, J.-M.5    Zheng, Y.6    Demailles, D.7
  • 81
    • 54049089994 scopus 로고    scopus 로고
    • Effects of submonolayer Mg on CoFe-MgO-CoFe magnetic tunnel junctions
    • J.C.A. Huang, C.Y. Hsu, W.H. Chen, Y.H. Lee, S.F. Chen, C.P. Liu, and Y. Tzeng Effects of submonolayer Mg on CoFe-MgO-CoFe magnetic tunnel junctions J. Appl. Phys. 104 7 2008 073909 73914 10.1063/1.2991439
    • (2008) J. Appl. Phys. , vol.104 , Issue.7 , pp. 073909-73914
    • Huang, J.C.A.1    Hsu, C.Y.2    Chen, W.H.3    Lee, Y.H.4    Chen, S.F.5    Liu, C.P.6    Tzeng, Y.7
  • 82
    • 24144455655 scopus 로고    scopus 로고
    • Giant tunneling magnetoresistance effect in low-resistance CoFeB/MgO(0 0 1)/CoFeB magnetic tunnel junctions for read-head applications
    • K. Tsunekawa, D.D. Djayaprawira, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, and K. Ando Giant tunneling magnetoresistance effect in low-resistance CoFeB/MgO(0 0 1)/CoFeB magnetic tunnel junctions for read-head applications Appl. Phys. Lett. 87 7 2005 072503 72513 10.1063/1.2012525
    • (2005) Appl. Phys. Lett. , vol.87 , Issue.7 , pp. 072503-72513
    • Tsunekawa, K.1    Djayaprawira, D.D.2    Nagai, M.3    Maehara, H.4    Yamagata, S.5    Watanabe, N.6    Yuasa, S.7    Suzuki, Y.8    Ando, K.9
  • 83
    • 84864424241 scopus 로고    scopus 로고
    • The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes
    • H. Yang, S.-H. Yang, and S. Parkin The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes AIP Adv. 2 1 2012 012150 012157 10.1063/1.3690139
    • (2012) AIP Adv. , vol.2 , Issue.1 , pp. 012150-012157
    • Yang, H.1    Yang, S.-H.2    Parkin, S.3
  • 85
    • 0036571188 scopus 로고    scopus 로고
    • The interaction of water with solid surfaces: Fundamental aspects revisited
    • M.A. Henderson The interaction of water with solid surfaces: fundamental aspects revisited Surf. Sci. Rep. 46 2002 1 308 10.1016/S0167-5729(01)00020-6
    • (2002) Surf. Sci. Rep. , vol.46 , pp. 1-308
    • Henderson, M.A.1
  • 86
    • 0032164723 scopus 로고    scopus 로고
    • Reaction of water with MgO(1 0 0) surfaces. Part II:: Synchrotron photoemission studies of defective surfaces
    • P. Liu, T. Kendelewicz, and G.E. Brown Jr. Reaction of water with MgO(1 0 0) surfaces. Part II:: Synchrotron photoemission studies of defective surfaces Surf. Sci. 412 0 1998 315 332 http://www.sciencedirect.com/science/article/pii/S0039602898004452
    • (1998) Surf. Sci. , vol.412 , pp. 315-332
    • Liu, P.1    Kendelewicz, T.2    Brown, G.E.3
  • 88
    • 55349116405 scopus 로고    scopus 로고
    • Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy
    • H.S. Craft, R. Collazo, M.D. Losego, Z. Sitar, and J.-P. Maria Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy J. Vacuum Sci. Technol. A: Vacuum Surf. Films 26 6 2008 1507 1510 10.1116/1.3000058
    • (2008) J. Vacuum Sci. Technol. A: Vacuum Surf. Films , vol.26 , Issue.6 , pp. 1507-1510
    • Craft, H.S.1    Collazo, R.2    Losego, M.D.3    Sitar, Z.4    Maria, J.-P.5
  • 89
    • 84869074729 scopus 로고    scopus 로고
    • Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
    • Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, and M.S. Strano Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nat. Nano 7 11 2012 699 712 10.1038/nnano.2012.193
    • (2012) Nat. Nano , vol.7 , Issue.11 , pp. 699-712
    • Wang, Q.H.1    Kalantar-Zadeh, K.2    Kis, A.3    Coleman, J.N.4    Strano, M.S.5
  • 91
    • 84875825798 scopus 로고    scopus 로고
    • Graphene-like two-dimensional materials
    • M. Xu, T. Liang, M. Shi, and H. Chen Graphene-like two-dimensional materials Chem. Rev. 113 5 2013 3766 3798 10.1021/cr300263a
    • (2013) Chem. Rev. , vol.113 , Issue.5 , pp. 3766-3798
    • Xu, M.1    Liang, T.2    Shi, M.3    Chen, H.4
  • 92
    • 84894635747 scopus 로고    scopus 로고
    • Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides
    • D. Jariwala, V.K. Sangwan, L.J. Lauhon, T.J. Marks, and M.C. Hersam Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides ACS Nano 8 2 2014 1102 1120 10.1021/nn500064s
    • (2014) ACS Nano , vol.8 , Issue.2 , pp. 1102-1120
    • Jariwala, D.1    Sangwan, V.K.2    Lauhon, L.J.3    Marks, T.J.4    Hersam, M.C.5
  • 97
    • 77957719951 scopus 로고    scopus 로고
    • Effect of noble-metal contacts on doping and band gap of graphene
    • A. Varykhalov, M.R. Scholz, T.K. Kim, and O. Rader Effect of noble-metal contacts on doping and band gap of graphene Phys. Rev. B 82 2010 121101 10.1103/PhysRevB.82.121101
    • (2010) Phys. Rev. B , vol.82 , pp. 121101
    • Varykhalov, A.1    Scholz, M.R.2    Kim, T.K.3    Rader, O.4
  • 98
    • 83655192159 scopus 로고    scopus 로고
    • Structural and electronic properties of the graphene/Al/Ni(1 1 1) intercalation system
    • E.N. Voloshina, A. Generalov, M. Weser, S. Böttcher, K. Horn, and Y.S. Dedkov Structural and electronic properties of the graphene/Al/Ni(1 1 1) intercalation system New J. Phys. 13 11 2011 113028 10.1088/1367-2630/13/11/113028
    • (2011) New J. Phys. , vol.13 , Issue.11 , pp. 113028
    • Voloshina, E.N.1    Generalov, A.2    Weser, M.3    Böttcher, S.4    Horn, K.5    Dedkov, Y.S.6
  • 100
    • 84866710881 scopus 로고    scopus 로고
    • Graphene on metallic surfaces: Problems and perspectives
    • E. Voloshina, and Y. Dedkov Graphene on metallic surfaces: problems and perspectives Phys. Chem. Chem. Phys. 14 2012 13502 13514 10.1039/C2CP42171B
    • (2012) Phys. Chem. Chem. Phys. , vol.14 , pp. 13502-13514
    • Voloshina, E.1    Dedkov, Y.2
  • 101
    • 77954058856 scopus 로고    scopus 로고
    • Charge-density depinning at metal contacts of graphene field-effect transistors
    • R. Nouchi, and K. Tanigaki Charge-density depinning at metal contacts of graphene field-effect transistors Appl. Phys. Lett. 96 25 2010 253503 10.1063/1.3456383
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.25 , pp. 253503
    • Nouchi, R.1    Tanigaki, K.2
  • 103
    • 68949114592 scopus 로고    scopus 로고
    • Role of contacts in graphene transistors: A scanning photocurrent study
    • T. Mueller, F. Xia, M. Freitag, J. Tsang, and P. Avouris Role of contacts in graphene transistors: a scanning photocurrent study Phys. Rev. B 79 24 2009 245430 10.1103/PhysRevB.79.245430
    • (2009) Phys. Rev. B , vol.79 , Issue.24 , pp. 245430
    • Mueller, T.1    Xia, F.2    Freitag, M.3    Tsang, J.4    Avouris, P.5
  • 105
    • 67649414628 scopus 로고    scopus 로고
    • First-principles study of the interaction and charge transfer between graphene and metals
    • P.A. Khomyakov, G. Giovannetti, P.C. Rusu, G. Brocks, J. van den Brink, and P.J. Kelly First-principles study of the interaction and charge transfer between graphene and metals Phys. Rev. B 79 2009 195425 10.1103/PhysRevB.79.195425
    • (2009) Phys. Rev. B , vol.79 , pp. 195425
    • Khomyakov, P.A.1    Giovannetti, G.2    Rusu, P.C.3    Brocks, G.4    Van Den Brink, J.5    Kelly, P.J.6
  • 106
    • 84874522419 scopus 로고    scopus 로고
    • Field effect doping of graphene in metal|dielectric|graphene heterostructures: A model based upon first-principles calculations
    • M. Bokdam, P.A. Khomyakov, G. Brocks, and P.J. Kelly Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations Phys. Rev. B 87 2013 075414 10.1103/PhysRevB.87.075414
    • (2013) Phys. Rev. B , vol.87 , pp. 075414
    • Bokdam, M.1    Khomyakov, P.A.2    Brocks, G.3    Kelly, P.J.4
  • 107
    • 77955232280 scopus 로고    scopus 로고
    • Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
    • S.A. Thiele, J.A. Schaefer, and F. Schwierz Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels J. Appl. Phys. 107 9 2010 094505 10.1063/1.3357398
    • (2010) J. Appl. Phys. , vol.107 , Issue.9 , pp. 094505
    • Thiele, S.A.1    Schaefer, J.A.2    Schwierz, F.3
  • 108
    • 80051944170 scopus 로고    scopus 로고
    • Modeling of the steady state characteristics of large-area graphene field-effect transistors
    • S. Thiele, and F. Schwierz Modeling of the steady state characteristics of large-area graphene field-effect transistors J. Appl. Phys. 110 3 2011 034506 10.1063/1.3606583
    • (2011) J. Appl. Phys. , vol.110 , Issue.3 , pp. 034506
    • Thiele, S.1    Schwierz, F.2
  • 109
    • 82155162333 scopus 로고    scopus 로고
    • Explicit drain current, charge and capacitance model of graphene field-effect transistors
    • D. Jimenez Explicit drain current, charge and capacitance model of graphene field-effect transistors IEEE Trans. Electron Devices 58 12 2011 4377 4383 10.1109/TED.2011.2168960
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.12 , pp. 4377-4383
    • Jimenez, D.1
  • 110
    • 80054954449 scopus 로고    scopus 로고
    • Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications
    • D. Jimenez, and O. Moldovan Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications IEEE Trans. Electron Devices 58 11 2011 4049 4052 10.1109/TED.2011.2163517
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.11 , pp. 4049-4052
    • Jimenez, D.1    Moldovan, O.2
  • 111
    • 84875722311 scopus 로고    scopus 로고
    • Theory of carrier density in multigated doped graphene sheets with quantum correction
    • M.-H. Liu Theory of carrier density in multigated doped graphene sheets with quantum correction Phys. Rev. B 87 2013 125427 10.1103/PhysRevB.87.125427
    • (2013) Phys. Rev. B , vol.87 , pp. 125427
    • Liu, M.-H.1
  • 112
    • 84871965713 scopus 로고    scopus 로고
    • Photoconductivity of biased graphene
    • M. Freitag, T. Low, F. Xia, and P. Avouris Photoconductivity of biased graphene Nat. Photon. 7 1 2013 53 59 10.1038/nphoton.2012.314
    • (2013) Nat. Photon. , vol.7 , Issue.1 , pp. 53-59
    • Freitag, M.1    Low, T.2    Xia, F.3    Avouris, P.4
  • 113
    • 84862658186 scopus 로고    scopus 로고
    • Large photocurrents in single layer graphene thin films: Effects of diffusion and drift
    • J. Loomis, and B. Panchapakesan Large photocurrents in single layer graphene thin films: effects of diffusion and drift Nanotechnology 23 26 2012 265203 http://stacks.iop.org/0957-4484/23/i=26/a=265203
    • (2012) Nanotechnology , vol.23 , Issue.26 , pp. 265203
    • Loomis, J.1    Panchapakesan, B.2
  • 115
    • 78449285942 scopus 로고    scopus 로고
    • Imaging simulation and electrostatic control of power dissipation in graphene devices
    • M.-H. Bae, Z.-Y. Ong, D. Estrada, and E. Pop Imaging simulation and electrostatic control of power dissipation in graphene devices Nano Lett. 10 12 2010 4787 4793 10.1021/nl1011596
    • (2010) Nano Lett. , vol.10 , Issue.12 , pp. 4787-4793
    • Bae, M.-H.1    Ong, Z.-Y.2    Estrada, D.3    Pop, E.4
  • 116
    • 36549091403 scopus 로고
    • Quantum capacitance devices
    • S. Luryi Quantum capacitance devices Appl. Phys. Lett. 52 6 1988 501 503 10.1063/1.99649
    • (1988) Appl. Phys. Lett. , vol.52 , Issue.6 , pp. 501-503
    • Luryi, S.1
  • 117
    • 34548446361 scopus 로고    scopus 로고
    • Carrier statistics and quantum capacitance of graphene sheets and ribbons
    • T. Fang, A. Konar, H. Xing, and D. Jena Carrier statistics and quantum capacitance of graphene sheets and ribbons Appl. Phys. Lett. 91 9 2007 092109 10.1063/1.2776887
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.9 , pp. 092109
    • Fang, T.1    Konar, A.2    Xing, H.3    Jena, D.4
  • 118
    • 79961214652 scopus 로고    scopus 로고
    • Electronic transport in two-dimensional graphene
    • S. Das Sarma, S. Adam, E.H. Hwang, and E. Rossi Electronic transport in two-dimensional graphene Rev. Mod. Phys. 83 2011 407 470 10.1103/RevModPhys.83.407
    • (2011) Rev. Mod. Phys. , vol.83 , pp. 407-470
    • Das Sarma, S.1    Adam, S.2    Hwang, E.H.3    Rossi, E.4
  • 119
    • 79952961488 scopus 로고    scopus 로고
    • Quantum capacitance limited vertical scaling of graphene field-effect transistor
    • H. Xu, Z. Zhang, Z. Wang, S. Wang, X. Liang, and L.-M. Peng Quantum capacitance limited vertical scaling of graphene field-effect transistor ACS Nano 5 3 2011 2340 2347 10.1021/nn200026e
    • (2011) ACS Nano , vol.5 , Issue.3 , pp. 2340-2347
    • Xu, H.1    Zhang, Z.2    Wang, Z.3    Wang, S.4    Liang, X.5    Peng, L.-M.6
  • 120
    • 72549085241 scopus 로고    scopus 로고
    • Ultrafast graphene photodetector
    • F. Xia, T. Mueller, Y.-m. Lin, A. Valdes-Garcia, and P. Avouris Ultrafast graphene photodetector Nat. Nano 4 12 2009 839 843 10.1038/nnano.2009.292
    • (2009) Nat. Nano , vol.4 , Issue.12 , pp. 839-843
    • Xia, F.1    Mueller, T.2    Valdes-Garcia, A.3    Avouris, P.4
  • 121
    • 61549141384 scopus 로고    scopus 로고
    • Controlling the efficiency of spin injection into graphene by carrier drift
    • C. Józsa, M. Popinciuc, N. Tombros, H.T. Jonkman, and B.J. van Wees Controlling the efficiency of spin injection into graphene by carrier drift Phys. Rev. B 79 2009 081402 10.1103/PhysRevB.79.081402
    • (2009) Phys. Rev. B , vol.79 , pp. 081402
    • Józsa, C.1    Popinciuc, M.2    Tombros, N.3    Jonkman, H.T.4    Van Wees, B.J.5
  • 122
  • 123
    • 0000075522 scopus 로고
    • Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface
    • M. Johnson, and R.H. Silsbee Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface Phys. Rev. B 37 10 1988 5312 5325 10.1103/PhysRevB.37.5312
    • (1988) Phys. Rev. B , vol.37 , Issue.10 , pp. 5312-5325
    • Johnson, M.1    Silsbee, R.H.2
  • 124
    • 0037129190 scopus 로고    scopus 로고
    • Electrical detection of spin precession in a metallic mesoscopic spin valve
    • F.J. Jedema, H.B. Heersche, A.T. Filip, J.J.A. Baselmans, and B.J. van Wees Electrical detection of spin precession in a metallic mesoscopic spin valve Nature 416 2002 713 716 10.1038/416713a
    • (2002) Nature , vol.416 , pp. 713-716
    • Jedema, F.J.1    Heersche, H.B.2    Filip, A.T.3    Baselmans, J.J.A.4    Van Wees, B.J.5
  • 126
    • 84866138651 scopus 로고    scopus 로고
    • Towards coherent spin precession in pure-spin current
    • H. Idzuchi, Y. Fukuma, and Y. Otani Towards coherent spin precession in pure-spin current Sci. Rep. 2 2012 10.1038/srep00628
    • (2012) Sci. Rep. , vol.2
    • Idzuchi, H.1    Fukuma, Y.2    Otani, Y.3
  • 127
    • 84946512603 scopus 로고    scopus 로고
    • Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
    • F. Volmer, M. Drögeler, T. Pohlmann, G. Güntherodt, C. Stampfer, and B. Beschoten Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices 2D Mater. 2 2 2015 024001 http://stacks.iop.org/2053-1583/2/i=2/a=024001
    • (2015) 2D Mater. , vol.2 , Issue.2 , pp. 024001
    • Volmer, F.1    Drögeler, M.2    Pohlmann, T.3    Güntherodt, G.4    Stampfer, C.5    Beschoten, B.6
  • 128
    • 84898405842 scopus 로고    scopus 로고
    • Magnetic defects in chemically converted graphene nanoribbons: Electron spin resonance investigation
    • S.R. Singamaneni, A. Stesmans, J. van Tol, D.V. Kosynkin, and J.M. Tour Magnetic defects in chemically converted graphene nanoribbons: electron spin resonance investigation AIP Adv. 4 4 2014 10.1063/1.4870942
    • (2014) AIP Adv. , vol.4 , Issue.4
    • Singamaneni, S.R.1    Stesmans, A.2    Van Tol, J.3    Kosynkin, D.V.4    Tour, J.M.5
  • 129
    • 84868306229 scopus 로고    scopus 로고
    • Magnetic moment formation in graphene detected by scattering of pure spin currents, Phys
    • K.M. McCreary, A.G. Swartz, W. Han, J. Fabian, and R.K. Kawakami Magnetic moment formation in graphene detected by scattering of pure spin currents, Phys Rev. Lett. 109 2012 186604 10.1103/PhysRevLett.109.186604
    • (2012) Rev. Lett. , vol.109 , pp. 186604
    • McCreary, K.M.1    Swartz, A.G.2    Han, W.3    Fabian, J.4    Kawakami, R.K.5
  • 131
    • 84873470008 scopus 로고    scopus 로고
    • Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices
    • M. Wojtaszek, I.J. Vera-Marun, T. Maassen, and B.J. van Wees Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices Phys. Rev. B 87 2013 081402 10.1103/PhysRevB.87.081402
    • (2013) Phys. Rev. B , vol.87 , pp. 081402
    • Wojtaszek, M.1    Vera-Marun, I.J.2    Maassen, T.3    Van Wees, B.J.4
  • 132
    • 84903643344 scopus 로고    scopus 로고
    • Effect of contacts on spin lifetime measurements in graphene
    • E. Sosenko, H. Wei, and V. Aji Effect of contacts on spin lifetime measurements in graphene Phys. Rev. B 89 2014 245436 10.1103/PhysRevB.89.245436
    • (2014) Phys. Rev. B , vol.89 , pp. 245436
    • Sosenko, E.1    Wei, H.2    Aji, V.3
  • 133
    • 84935425752 scopus 로고    scopus 로고
    • Revisiting the measurement of the spin relaxation time in graphene-based devices
    • H. Idzuchi, A. Fert, and Y. Otani Revisiting the measurement of the spin relaxation time in graphene-based devices Phys. Rev. B 91 2015 241407 10.1103/PhysRevB.91.241407
    • (2015) Phys. Rev. B , vol.91 , pp. 241407
    • Idzuchi, H.1    Fert, A.2    Otani, Y.3
  • 134
    • 80052299811 scopus 로고    scopus 로고
    • Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
    • S.P. Dash, S. Sharma, J.C. Le Breton, J. Peiro, H. Jaffrès, J.-M. George, A. Lemaître, and R. Jansen Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface Phys. Rev. B 84 2011 054410 10.1103/PhysRevB.84.054410
    • (2011) Phys. Rev. B , vol.84 , pp. 054410
    • Dash, S.P.1    Sharma, S.2    Le Breton, J.C.3    Peiro, J.4    Jaffrès, H.5    George, J.-M.6    Lemaître, A.7    Jansen, R.8
  • 139
    • 80053544483 scopus 로고    scopus 로고
    • Theory of 2d transport in graphene for correlated disorder
    • Q. Li, E.H. Hwang, E. Rossi, and S. Das Sarma Theory of 2d transport in graphene for correlated disorder Phys. Rev. Lett. 107 2011 156601 10.1103/PhysRevLett.107.156601
    • (2011) Phys. Rev. Lett. , vol.107 , pp. 156601
    • Li, Q.1    Hwang, E.H.2    Rossi, E.3    Das Sarma, S.4
  • 140
    • 81055149843 scopus 로고    scopus 로고
    • Correlated charged impurity scattering in graphene
    • J. Yan, and M.S. Fuhrer Correlated charged impurity scattering in graphene Phys. Rev. Lett. 107 2011 206601 10.1103/PhysRevLett.107.206601
    • (2011) Phys. Rev. Lett. , vol.107 , pp. 206601
    • Yan, J.1    Fuhrer, M.S.2
  • 141
    • 84859419332 scopus 로고    scopus 로고
    • Nonlinear detection of spin currents in graphene with non-magnetic electrodes
    • I.J. Vera-Marun, V. Ranjan, and B.J. van Wees Nonlinear detection of spin currents in graphene with non-magnetic electrodes Nat. Phys. 8 4 2012 313 316 10.1038/nphys2219
    • (2012) Nat. Phys. , vol.8 , Issue.4 , pp. 313-316
    • Vera-Marun, I.J.1    Ranjan, V.2    Van Wees, B.J.3
  • 142
    • 38849201768 scopus 로고    scopus 로고
    • Observation of electron-hole puddles in graphene using a scanning single-electron transistor
    • J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J.H. Smet, K. von Klitzing, and A. Yacoby Observation of electron-hole puddles in graphene using a scanning single-electron transistor Nat. Phys. 4 2 2008 144 148 10.1038/nphys781
    • (2008) Nat. Phys. , vol.4 , Issue.2 , pp. 144-148
    • Martin, J.1    Akerman, N.2    Ulbricht, G.3    Lohmann, T.4    Smet, J.H.5    Von Klitzing, K.6    Yacoby, A.7
  • 143
    • 79960678926 scopus 로고    scopus 로고
    • Empirical modeling of metal-contact effects on graphene field-effect transistors
    • R. Nouchi, and K. Tanigaki Empirical modeling of metal-contact effects on graphene field-effect transistors Jpn. J. Appl. Phys. 50 7 2011 070109 10.1143/JJAP.50.070109
    • (2011) Jpn. J. Appl. Phys. , vol.50 , Issue.7 , pp. 070109
    • Nouchi, R.1    Tanigaki, K.2
  • 144
    • 77957713218 scopus 로고    scopus 로고
    • Nonlinear screening of charges induced in graphene by metal contacts
    • P.A. Khomyakov, A.A. Starikov, G. Brocks, and P.J. Kelly Nonlinear screening of charges induced in graphene by metal contacts Phys. Rev. B 82 2010 115437 10.1103/PhysRevB.82.115437
    • (2010) Phys. Rev. B , vol.82 , pp. 115437
    • Khomyakov, P.A.1    Starikov, A.A.2    Brocks, G.3    Kelly, P.J.4
  • 145
    • 66449135359 scopus 로고    scopus 로고
    • Imaging of photocurrent generation and collection in single-layer graphene
    • J. Park, Y.H. Ahn, and C. Ruiz-Vargas Imaging of photocurrent generation and collection in single-layer graphene Nano Lett. 9 5 2009 1742 1746 10.1021/nl8029493
    • (2009) Nano Lett. , vol.9 , Issue.5 , pp. 1742-1746
    • Park, J.1    Ahn, Y.H.2    Ruiz-Vargas, C.3


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