Observation of electron-hole puddles in graphene using a scanning single-electron transistor

Nature Physics

Volumn 4, Issue 2, 2008, Pages 144-148

  Martin, J ^a   Akerman, N ^a   Ulbricht, G ^b   Lohmann, T ^b   Smet, J H ^b   Von Klitzing, K ^b   Yacoby, A ^a,c  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRONIC STRUCTURE; ELECTRONS; GRAPHENE; GRAPHENE TRANSISTORS; RELATIVITY;

DENSITY OF ELECTRONIC STATE; DENSITY OF STATE; ELECTRON-HOLE PUDDLES; INTERACTING ELECTRONS; LOCAL DENSITY OF STATE; NEUTRALITY POINT; RELATIVISTIC PARTICLES; SUBSTRATE EFFECTS;

SINGLE ELECTRON TRANSISTORS;

EID: 38849201768     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys781     Document Type: Article

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