Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices

Physical Review X

Volumn 4, Issue 4, 2014, Pages

  Couto, Nuno J G ^a   Costanzo, Davide ^a   Engels, Stephan ^b,e   Ki, Dong Keun ^a   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Stampfer, Christoph ^b,e   Guinea, Francisco ^d   Morpurgo, Alberto F ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Condensed matter physics; Graphene; Mesoscopics

Indexed keywords

BORON NITRIDE; CONDENSED MATTER PHYSICS; GRAPHENE; III-V SEMICONDUCTORS; NITRIDES; SUBSTRATES; TEMPERATURE;

DEFORMATION POTENTIAL; DIFFERENT SUBSTRATES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); MESOSCOPICS; MICROSCOPIC MECHANISMS; RAMAN SPECTROSCOPY MEASUREMENTS; TRANSPORT MEASUREMENTS;

GRAPHENE DEVICES;

EID: 84921494402     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.4.041019     Document Type: Article

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