Effect of electron-beam irradiation on graphene field effect devices

Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

  Childres, Isaac ^a,b   Jauregui, Luis A ^a,b   Foxe, Michael ^a,c   Tian, Jifa ^a,b   Jalilian, Romaneh ^a,b,d   Jovanovic, Igor ^a,c   Chen, Yong P ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b Purdue University   (United States)

^c The Center for Nanotechnology Education and Utilization   (United States)

^d NaugaNeedles LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMONLY USED; ELECTRON-BEAM EXPOSURE; ELECTRON-BEAM IRRADIATIONS; ELECTRONIC TRANSPORT PROPERTIES; ENERGETIC ELECTRON; FIELD-EFFECT DEVICES; GRAPHENE DEVICES; N-DOPING; NEGATIVE SHIFT; NEUTRAL POINTS; RADIATION-HARD;

CARRIER MOBILITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; FIELD EFFECT TRANSISTORS; IRRADIATION; RADIATION DAMAGE; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 78149441176     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3502610     Document Type: Article

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