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See Supplemental Material at for a detailed description of the device fabrication, transport measurements, simulation of spin transport in inhomogeneous systems, analysis of the experimental data, results for different samples and temperatures, and the estimation of the electric field dependent spin-orbit coupling.
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See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.113.086602 for a detailed description of the device fabrication, transport measurements, simulation of spin transport in inhomogeneous systems, analysis of the experimental data, results for different samples and temperatures, and the estimation of the electric field dependent spin-orbit coupling.
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84887299269
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84907339307
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A resistance of (Equation presented) was subtracted in the calculation of (Equation presented) for (Equation presented) to account for the non-top-gated regions.
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A resistance of (Equation presented) was subtracted in the calculation of (Equation presented) for (Equation presented) to account for the non-top-gated regions.
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28
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84907339306
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Two-terminal local measurements on epitaxial graphene estimated (Equation presented) at 4.2 K [29].
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Two-terminal local measurements on epitaxial graphene estimated (Equation presented) at 4.2 K [29].
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29
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84863439003
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31
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84907319336
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At low (Equation presented), (Equation presented) of our devices scales with (Equation presented) leading to a background in our signal that overcomes the nonlocal spin signal at large B.
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At low (Equation presented), (Equation presented) of our devices scales with (Equation presented) leading to a background in our signal that overcomes the nonlocal spin signal at large B.
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33
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