Si-compatible cleaning process for graphene using low-density inductively coupled plasma

ACS Nano

Volumn 6, Issue 5, 2012, Pages 4410-4417

  Lim, Yeong Dae ^a   Lee, Dae Yeong ^a   Shen, Tian Zi ^a   Ra, Chang Ho ^a   Choi, Jae Young ^b   Yoo, Won Jong ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Charge neutrality point; Cleaning; Field effect transistor; Graphene; Inductively coupled plasma; Silicon processing

Indexed keywords

CAPACITIVELY COUPLED PLASMAS; CHARGE NEUTRALITY; CLEANING METHODS; CLEANING PROCESS; DEFECT-FREE; ELECTRICAL CURRENT; FEW-LAYER GRAPHENE; HIGH-THROUGHPUT; LOW DENSITY; LOW TEMPERATURES; PLANAR SYMMETRY; POLYMER RESIST; ROOM TEMPERATURE; SILICON PROCESSING; SILICON-BASED ELECTRONICS; THERMAL VACUUM;

FIELD EFFECT TRANSISTORS; GRAPHENE; INDUCTIVELY COUPLED PLASMA; PLASMA DENSITY; SILICON;

CLEANING;

EID: 84864710503     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301093h     Document Type: Article

References (43)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films. Science 2004, 306, 666-669.
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene. Nature 2005, 438, 197-200.
3. Zhang, Y. B.; Tan, Y.-W.; Stormer, H. L.; Kim, P. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene. Nature 2005, 438, 201-204.
4. Schedin, F.; Geim, A. K.; Morozov, S. V.; Hill, E. W.; Blake, P.; Katsnelson, M. I.; Novoselov, K. S. Detection of Individual Gas Molecules Adsorbed on Graphene. Nat. Mater. 2007, 6, 652-655.
5. 2 Substrate. Nano Lett. 2010, 10, 4944-4951.
6. 2. Nano Lett. 2007, 7, 1643-1648.
7. Dan, Y. P.; Lu, Y.; Kybert, N. J.; Luo, Z. T.; Johnson, A. T. C. Intrinsic Response of Graphene Vapor Sensors. Nano Lett. 2009, 9, 1472-1475.
8. 2-Supported Graphene Devices. Nano Lett. 2011, 11, 767-771.
9. 2-Supported Single-Layer Graphene by Thermal Annealing. J. Phys. Chem. C 2010, 114, 6894-6900.
10. Moser, J.; Barreiro, A.; Bachtold, A. Current-Induced Cleaning of Graphene. Appl. Phys. Lett. 2007, 91, 163513
11. Connolly, M. R.; Chiou, K. L.; Smith, C. G.; Anderson, D.; Jones, G. A. C.; Lombardo, A.; Fasoli, A.; Ferrari, A. C. Scanning Gate Microscopy of Current-Annealed Single Layer Graphene. Appl. Phys. Lett. 2010, 96, 113501
12. Lin, Y.-C.; Lu, C.-C.; Yeh, C.-H.; Jin, C. H.; Suenaga, K.; Chiu, P.-W. Graphene Annealing: How Clean Can It Be? Nano Lett. 2012, 12, 414-419.
13. Rider, A. E.; Kumar, S.; Furman, S. A.; Ostrikov, K. Self-Organized Au Nanoarrays on Vertical Graphenes: an Advanced Three-Dimensional Sensing Platform. Chem. Commun. 2012, 48, 2659-2661.
14. Nandamuri, G.; Roumimov, S.; Solanki, R. Remote Plasma Assisted Growth of Grapheme Films. Appl. Phys. Lett. 2010, 96, 154101
15. Seo, D. H.; Kumar, S.; Ostrikov, K. Thinning Vertical Graphenes, Tuning Electrical Response: From Semiconducting to Metallic. J. Mater. Chem. 2011, 21, 16339
16. Elias, D. C.; Nair, R. R.; Mohiuddin, T. M. G.; Morozov, S. V.; Blake, P.; Halsall, M. P.; Ferrari, A. C.; Boukhvalov, D. W.; Katsnelson, M. I.; Geim, A. K.; et al. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane. Science 2009, 323, 610-613.
17. Hopkins, P. E.; Baraket, M.; Barnat, E. V.; Beechem, T. E.; Kearney, S. P.; Duda, J. C.; Robinson, J. T.; Walton, S. G. Manipulating Thermal Conductance at Metal-Graphene Contacts via Chemical Functionalization. Nano Lett. 2012, 12, 590-595.
18. Bai, J.; Duan, X.; Huang, Y. Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask. Nano Lett. 2009, 9, 2083-2087.
19. Xie, L.; Jiao, L.; Dai, H. Selective Etching of Graphene Edges by Hydrogen Plasma. J. Am. Chem. Soc. 2010, 132, 14751-14753.
20. Lin, Y.-C.; Lin, C.-Y.; Chiu, P.-W. Controllable Graphene N-Doping with Ammonia Plasma. Appl. Phys. Lett. 2010, 96, 133110
21. Wu, J.; Xie, L.; Li, Y.; Wang, H.; Ouyang, Y.; Guo, J.; Dai, H. Controlled Chlorine Plasma Reaction for Noninvasive Graphene Doping. J. Am. Chem. Soc. 2011, 133, 19668-19671.
22. Nourbakhsh, A.; Cantoro, M.; Vosch, T.; Pourtois, G.; Clemente, F.; van der Veen, M. H.; Hofkens, J.; Heyns, M. M.; Gendt, S. D.; Sels, B. F. Bandgap Opening in Oxygen Plasma-Treated Graphene. Nanotechnology 2010, 21, 435203
23. Shin, Y. J.; Wang, Y.; Huang, H.; Kalon, G.; Wee, A. T. S.; Shen, Z.; Bhatia, C. S.; Yang, H. Surface-Energy Engineering of Graphene. Langmuir 2010, 26, 3798-3802.
24. Choi, M. S.; Lee, S. H.; Yoo, W. J. Plasma Treatments to Improve Metal Contacts in Graphene Field Effect Transistor. J. Appl. Phys. 2011, 110, 073305
25. Gokus, T.; Nair, R. R.; Bonetti, A.; Bohmler, M.; Lombardo, A.; Novoselov, K. S.; Geim, A. K.; Ferrari, A. C.; Hartschuh, A. Making Graphene Luminescent by Oxygen Plasma Treatment. ACS Nano 2009, 3, 3963-3968.
26. Xiao, N.; Dong, X.; Song, L.; Liu, D.; Tay, Y. Y.; Wu, S.; Li, L.-J.; Zhao, Y.; Yu, T.; Zhang, H.; et al. Enhanced Thermopower of Graphene Films with Oxygen Plasma Treatment. ACS Nano 2011, 5, 2749-2755.
27. Xu, S.; Ostrikov, K. N.; Li, Y.; Tsakadze, E. L.; Jones, I. R. Low-Frequency, High-Density, Inductively Coupled Plasma Sources: Operation and Applications. Phys. Plasmas 2001, 8, 2549-2557.
28. Kim, K.; Choi, J.-Y.; Kim, T.; Cho, S.-H.; Chung, H.-J. A Role for Graphene in Silicon-Based Semiconductor Devices. Nature 2011, 479, 338-344.
29. Lieberman, M. A.; Lichtenberg, A. J. Principles of Plasma Discharges and Materials Processing; Wiley Interscience: New York, 1994; p 165.
30. Denpoh, K.; Ventzek, P. L. G. Test Particle Simulation of the Role of Ballistic Electrons in Hybrid dc/rf Capacitively Coupled Plasmas in Argon. J. Vac. Sci. Technol. A 2008, 26, 1415-1424.
31. Lehtinen, O.; Kotakoski, J.; Krasheninnikov, A. V.; Tolvanen, A.; Nordlund, K.; Keinonen, J. Effects of Ion Bombardment on a Two-Dimensional Target: Atomistic Simulations of Graphene Irradiation. Phys. Rev. B 2010, 81, 153401
32. Davis, W. D.; Vanderslice, T. A. Ion Energies at the Cathode of a Glow Discharge. Phys. Rev. 1963, 131, 219-228.
33. Gao, F.; Zhao, S.-X.; Li, X.-S.; Wang, Y.-N. Comparison Between Experiment and Simulation for Argon Inductively Coupled Plasma. Phys. Plasmas 2009, 16, 113502
34. Hsu, C. C.; Titus, M. J.; Graves, D. B. Measurement and Modeling of Time-and Spatial-Resolved Wafer Surface Temperature in Inductively Coupled Plasmas. J. Vac. Sci. Technol. A 2007, 25, 607-614.
35. Titus, M. J.; Graves, D. B. Wafer Heating Mechanisms in a Molecular Gas, Inductively Coupled Plasma: in situ, Real Time Wafer Surface Measurements and Three-Dimensional Thermal Modeling. J. Vac. Sci. Technol. A 2008, 26, 1154-1160.
36. Wolf, S.; Tauber, R. N. Silicon Processing for the VLSI Era; Lattice Press: CA, 1986.
37. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science 2009, 324, 1312-1314.
38. 2. Appl. Phys. Lett. 2011, 99, 122108
39. Mohiuddin, T. M. G.; Lombardo, A.; Nair, R. R.; Bonetti, A.; Savini, G.; Jalil, R.; Bonini, N.; Basko, D. M.; Galiotis, C.; Marzari, N.; et al. Uniaxial Strain in Graphene by Raman Spectroscopy: G peak Splitting, Grüneisen Parameters, and Sample Orientation. Phys. Rev. B 2009, 79, 205433.
40. Calizo, I.; Balandin, A. A.; Bao, W.; Miao, F.; Lau, C. N. Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers. Nano Lett. 2007, 7, 2645-2649.
41. Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Karpan, V. M.; van den Brink, J.; Kelly, P. J. Doping Graphene with Metal Contacts. Phys. Rev. Lett. 2008, 101, 026803
42. Tapaszto, L.; Dobrik, G.; Nemes-Incze, P.; Vertesy, G.; Lambin, Ph.; Biro, L. P. Tuning the Electronic Structure of Graphene by Ion Irradiation. Phys. Rev. B 2008, 78, 233407
43. Gabriel, C. T. Wafer Temperature Measurements During Dielectric Etching in a MERIE Etcher. J. Vac. Sci. Technol. B 2002, 20, 1542-1547.