Explicit drain current, charge and capacitance model of graphene field-effect transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4377-4383

  Jiménez, David ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Analog; field effect transistor (FET); graphene; modeling; radio frequency (RF)

Indexed keywords

ANALOG; BAND GAP ENGINEERING; CAPACITANCE MODEL; CLOSED-FORM EXPRESSION; DRIFT DIFFUSION; EXPLICIT MODELS; FIELD-EFFECT; PARTITION SCHEMES; PHYSICS-BASED MODELS; RADIO FREQUENCY (RF); RADIO-FREQUENCY APPLICATIONS; SATURATION VELOCITY; TRANSIENT BEHAVIOR;

CAPACITANCE; DRAIN CURRENT; GRAPHENE; MODELS; POWER QUALITY;

FIELD EFFECT TRANSISTORS;

EID: 82155162333     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2168960     Document Type: Article

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