메뉴 건너뛰기




Volumn 10, Issue 12, 2010, Pages 4787-4793

Imaging, simulation, and electrostatic control of power dissipation in graphene devices

Author keywords

Graphene; high field transport; power dissipation; self consistent simulation; thermal imaging; transistor

Indexed keywords

AMBIPOLAR TRANSPORT; APPLIED BIAS; BI-LAYER; CARRIER DISTRIBUTIONS; DENSITY OF STATE; ELECTROSTATIC CONTROL; GRAPHENE DEVICES; HIGH FIELD TRANSPORT; HOT SPOT; NANOSCALE DEVICE; POWER DISSIPATION; SELF-CONSISTENT SIMULATIONS; THERMAL IMAGING; THERMAL MICROSCOPY; THERMAL TRANSPORT;

EID: 78449285942     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1011596     Document Type: Article
Times cited : (174)

References (40)
  • 1
    • 77953636772 scopus 로고    scopus 로고
    • Energy dissipation and transport in nanoscale devices
    • Pop, E. Energy dissipation and transport in nanoscale devices Nano Res. 2010, 3, 147-169
    • (2010) Nano Res. , vol.3 , pp. 147-169
    • Pop, E.1
  • 2
    • 33947269110 scopus 로고    scopus 로고
    • Cooling a Microprocessor Chip
    • Mahajan, R. Cooling a Microprocessor Chip Proc. IEEE 2006, 94, 1476-1486
    • (2006) Proc. IEEE , vol.94 , pp. 1476-1486
    • Mahajan, R.1
  • 3
    • 40749140712 scopus 로고    scopus 로고
    • Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
    • Morozov, S. V. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer Phys. Rev. Lett. 2008, 100, 016602-016604
    • (2008) Phys. Rev. Lett. , vol.100 , pp. 016602-016604
    • Morozov, S.V.1
  • 4
    • 65549156874 scopus 로고    scopus 로고
    • Phonon thermal conduction in graphene: Role of Umklapp and edge roughness scattering
    • Nika, D. L.; Pokatilov, E. P.; Askerov, A. S.; Balandin, A. A. Phonon thermal conduction in graphene: Role of Umklapp and edge roughness scattering Phys. Rev. B 2009, 79, 155413-155412
    • (2009) Phys. Rev. B , vol.79 , pp. 155413-155412
    • Nika, D.L.1    Pokatilov, E.P.2    Askerov, A.S.3    Balandin, A.A.4
  • 5
    • 43449125024 scopus 로고    scopus 로고
    • Carbon wonderland
    • Geim, A. K.; Kim, P. Carbon wonderland Sci. Am. 2008, 298, 90-97
    • (2008) Sci. Am. , vol.298 , pp. 90-97
    • Geim, A.K.1    Kim, P.2
  • 6
    • 67649225738 scopus 로고    scopus 로고
    • Graphene: Status and Prospects
    • Geim, A. K. Graphene: Status and Prospects Science 2009, 324, 1530-1534
    • (2009) Science , vol.324 , pp. 1530-1534
    • Geim, A.K.1
  • 7
    • 57349090160 scopus 로고    scopus 로고
    • Current saturation in zero-bandgap, top-gated graphene field-effect transistors
    • Meric, I. Current saturation in zero-bandgap, top-gated graphene field-effect transistors Nature Nano 2008, 3, 654-659
    • (2008) Nature Nano , vol.3 , pp. 654-659
    • Meric, I.1
  • 8
    • 0003225199 scopus 로고
    • Heat generation in semiconductor devices
    • Lindefelt, U. Heat generation in semiconductor devices J. Appl. Phys. 1994, 75, 942-957
    • (1994) J. Appl. Phys. , vol.75 , pp. 942-957
    • Lindefelt, U.1
  • 9
    • 66449099026 scopus 로고    scopus 로고
    • Energy Dissipation in Graphene Field-Effect Transistors
    • Freitag, M. Energy Dissipation in Graphene Field-Effect Transistors Nano Lett. 2009, 9, 1883-1888
    • (2009) Nano Lett. , vol.9 , pp. 1883-1888
    • Freitag, M.1
  • 10
    • 76749134375 scopus 로고    scopus 로고
    • Hot Phonons in an Electrically Biased Graphene Constriction
    • Chae, D.-H.; Krauss, B.; von Klitzing, K.; Smet, J. H. Hot Phonons in an Electrically Biased Graphene Constriction Nano Lett. 2010, 10, 466-471
    • (2010) Nano Lett. , vol.10 , pp. 466-471
    • Chae, D.-H.1    Krauss, B.2    Von Klitzing, K.3    Smet, J.H.4
  • 11
    • 77950994920 scopus 로고    scopus 로고
    • Infrared microscopy of Joule heating in graphene field effect transistors
    • Genoa, Italy, July 26-30, 2009; pp. 818-821
    • Bae, M.-H.; Ong, Z.-Y.; Estrada, D.; Pop, E. Infrared microscopy of Joule heating in graphene field effect transistors, 9th IEEE Conference Nanotechnology, IEEE-NANO, Genoa, Italy, July 26-30, 2009; pp. 818-821.
    • 9th IEEE Conference Nanotechnology, IEEE-NANO
    • Bae, M.-H.1    Ong, Z.-Y.2    Estrada, D.3    Pop, E.4
  • 12
    • 7444220645 scopus 로고    scopus 로고
    • Electric Field Effect in Atomically Thin Carbon Films
    • Novoselov, K. S. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
    • (2004) Science , vol.306 , pp. 666-669
    • Novoselov, K.S.1
  • 13
    • 34548446361 scopus 로고    scopus 로고
    • Carrier statistics and quantum capacitance of graphene sheets and ribbons
    • Fang, T.; Konar, A.; Xing, H.; Jena, D. Carrier statistics and quantum capacitance of graphene sheets and ribbons Appl. Phys. Lett. 2007, 91, 092109-092103
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 092109-092103
    • Fang, T.1    Konar, A.2    Xing, H.3    Jena, D.4
  • 14
    • 38849201768 scopus 로고    scopus 로고
    • Observation of electron-hole puddles in graphene using a scanning single-electron transistor
    • Martin, J. Observation of electron-hole puddles in graphene using a scanning single-electron transistor Nat. Phys. 2008, 4, 144-148
    • (2008) Nat. Phys. , vol.4 , pp. 144-148
    • Martin, J.1
  • 15
    • 60349109113 scopus 로고    scopus 로고
    • 3 dielectric
    • 3 dielectric Appl. Phys. Lett. 2009, 94, 062107-062103
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 062107-062103
    • Kim, S.1
  • 16
    • 78650163148 scopus 로고    scopus 로고
    • Graphene hot spot movie available as supporting information on the ACS web page, and at the authors' web site
    • Graphene hot spot movie available as supporting information on the ACS web page, and at the authors' web site http://poplab.ece.illinois.edu/ multimedia.html.
  • 17
    • 78650122419 scopus 로고    scopus 로고
    • 2 layer is transparent to IR. Hence, the detected IR radiation is a combination of thermal signals from the graphene and from the Si substrate heated by the graphene. By numerical calculations, we find the real graphene temperature rise (Δ T) is proportional to that measured by the IR microscope and is approximately three times higher (see Supporting Information)
    • 2 layer is transparent to IR. Hence, the detected IR radiation is a combination of thermal signals from the graphene and from the Si substrate heated by the graphene. By numerical calculations, we find the real graphene temperature rise (Δ T) is proportional to that measured by the IR microscope and is approximately three times higher (see Supporting Information).
  • 18
    • 49949134400 scopus 로고
    • Effects of diffusion current on characteristics of metal-oxide (insulator) semiconductor transistors
    • Pao, H. C.; Sah, C. T. Effects of diffusion current on characteristics of metal-oxide (insulator) semiconductor transistors Solid-State Electron. 1966, 9, 927-937
    • (1966) Solid-State Electron. , vol.9 , pp. 927-937
    • Pao, H.C.1    Sah, C.T.2
  • 19
    • 43049170468 scopus 로고    scopus 로고
    • Ultrahigh electron mobility in suspended graphene
    • Bolotin, K. I. Ultrahigh electron mobility in suspended graphene Solid State Commun. 2008, 146, 351-355
    • (2008) Solid State Commun. , vol.146 , pp. 351-355
    • Bolotin, K.I.1
  • 20
    • 42349113188 scopus 로고    scopus 로고
    • Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits
    • Ghosh, S. Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits Appl. Phys. Lett. 2008, 92, 151911-151913
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 151911-151913
    • Ghosh, S.1
  • 21
    • 78650109971 scopus 로고    scopus 로고
    • note
    • Temperature effects on mobility and velocity saturation are neglected here; mobility was found to be relatively independent of temperature in this range, presumably being limited by impurity scattering.
  • 23
    • 0001136968 scopus 로고
    • STB Model and Transport Properties of Pyrolytic Graphites
    • Klein, C. A. STB Model and Transport Properties of Pyrolytic Graphites J. Appl. Phys. 1964, 35, 2947-2957
    • (1964) J. Appl. Phys. , vol.35 , pp. 2947-2957
    • Klein, C.A.1
  • 25
    • 77950791436 scopus 로고    scopus 로고
    • Two-Dimensional Phonon Transport in Supported Graphene
    • Seol, J. H. Two-Dimensional Phonon Transport in Supported Graphene Science 2010, 328, 213-216
    • (2010) Science , vol.328 , pp. 213-216
    • Seol, J.H.1
  • 26
    • 34248575328 scopus 로고    scopus 로고
    • Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates
    • Pop, E.; Mann, D. A.; Goodson, K. E.; Dai, H. Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates J. Appl. Phys. 2007, 101 093710-093710
    • (2007) J. Appl. Phys. , vol.101 , pp. 093710-093710
    • Pop, E.1    Mann, D.A.2    Goodson, K.E.3    Dai, H.4
  • 27
    • 47249117849 scopus 로고    scopus 로고
    • The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes
    • Pop, E. The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes Nanotechnology 2008, 19, 295202
    • (2008) Nanotechnology , vol.19 , pp. 295202
    • Pop, E.1
  • 29
    • 78650087868 scopus 로고    scopus 로고
    • -2), respectively, and this stability is provided by our PMMA passivation (see Supporting Information, Fig. S8)
    • -2), respectively, and this stability is provided by our PMMA passivation (see Supporting Information, Fig. S8).
  • 31
    • 68949114592 scopus 로고    scopus 로고
    • Role of contacts in graphene transistors: A scanning photocurrent study
    • Mueller, T.; Xia, F.; Freitag, M.; Tsang, J.; Avouris, P. Role of contacts in graphene transistors: A scanning photocurrent study Phys. Rev. B 2009, 79, 245430-245436
    • (2009) Phys. Rev. B , vol.79 , pp. 245430-245436
    • Mueller, T.1    Xia, F.2    Freitag, M.3    Tsang, J.4    Avouris, P.5
  • 32
    • 77949696781 scopus 로고    scopus 로고
    • Scanning gate microscopy of current-annealed single layer graphene
    • Connolly, M. R. Scanning gate microscopy of current-annealed single layer graphene Appl. Phys. Lett. 2010, 96, 113501-113503
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 113501-113503
    • Connolly, M.R.1
  • 33
    • 44849104928 scopus 로고    scopus 로고
    • Carbon-nanotube photonics and optoelectronics
    • Avouris, P.; Freitag, M.; Perebeinos, V. Carbon-nanotube photonics and optoelectronics Nat. Photonics 2008, 2, 341-350
    • (2008) Nat. Photonics , vol.2 , pp. 341-350
    • Avouris, P.1    Freitag, M.2    Perebeinos, V.3
  • 34
    • 36249007086 scopus 로고    scopus 로고
    • Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
    • Castro, E. V. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect Phys. Rev. Lett. 2007, 99, 216802-216804
    • (2007) Phys. Rev. Lett. , vol.99 , pp. 216802-216804
    • Castro, E.V.1
  • 35
    • 41549145225 scopus 로고    scopus 로고
    • Boltzmann transport and residual conductivity in bilayer graphene
    • Adam, S.; Das Sarma, S. Boltzmann transport and residual conductivity in bilayer graphene Phys. Rev. B 2008, 77, 115436-115436
    • (2008) Phys. Rev. B , vol.77 , pp. 115436-115436
    • Adam, S.1    Das Sarma, S.2
  • 36
    • 78650080957 scopus 로고    scopus 로고
    • OP in the range 60-180 meV
    • OP in the range 60-180 meV.
  • 37
    • 0030379801 scopus 로고    scopus 로고
    • Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques
    • Tenbroek, B.; Lee, M. S. L.; Redman-White, W.; Bunyan, R. J. T.; Uren, M. J. Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques IEEE Trans. Electron Devices 1996, 43, 2240-2248
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 2240-2248
    • Tenbroek, B.1    Lee, M.S.L.2    Redman-White, W.3    Bunyan, R.J.T.4    Uren, M.J.5
  • 39
    • 0029291056 scopus 로고
    • Measurement of I-V curve of silicon-on-insulator (SOI) MOSFETs without self-heating
    • Jenkins, K. A.; Sun, J.Y.-C. Measurement of I-V curve of silicon-on-insulator (SOI) MOSFETs without self-heating IEEE Electron Device Lett. 1995, 16, 145
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 145
    • Jenkins, K.A.1    Sun, J.Y.-C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.