Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001)

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

  Abel, Joseph ^a   Matsubayashi, Akitomo ^a   Murray, Thomas ^a   Dimitrakopoulos, Christos ^b   Farmer, Damon B ^b   Afzali, Ali ^b   Grill, Alfred ^b   Sung, C Y ^b   Labella, Vincent P ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; HAFNIUM OXIDES; OXIDES; SILICON CARBIDE;

DIAZONIUM SALTS; EPITAXIAL GRAPHENE; INTERFACE BARRIER; NONLOCAL; ON-WAFER; OXIDE INTERFACES; PROCESSING METHOD; SEED LAYER; SPIN INJECTION; SPIN PRECESSION; SPIN RELAXATION; SPIN TRANSPORT;

GRAPHENE;

EID: 84864197470     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4732460     Document Type: Article

References (31)

1. B. Behin-Aein, D. Datta, S. Salahuddin, and S. Datta, Nat. Nanotechnol. 4, 266 (2010). 10.1038/nnano.2010.31
2. H. Dery, P. Dalal, L. Cywinski, and L. J. Sham, Nature (London) 447, 573 (2007). 10.1038/nature05833
3. W. Han, K. McCreary, K. Pi, W. Wang, Y. Li, H. Wen, J. Chen, and R. Kawakami, J. Magn. Magn. Mater. 324, 369 (2012). 10.1016/j.jmmm.2011.08.001
4. W. Han and R. K. Kawakami, Phys. Rev. Lett. 107, 047207 (2011). 10.1103/PhysRevLett.107.047207
5. T.-Y. Yang, Phys. Rev. Lett. 107, 047206 (2011). 10.1103/PhysRevLett.107. 047206
6. T. Maassen, J. Jasper van den Berg, N. IJbema, F. Fromm, T. Seyller, R. Yakimova, and B. J. van Wees, Nano Lett. 12, 1498 (2012). 10.1021/nl2042497
7. C. Ertler, S. Konschuh, M. Gmitra, and J. Fabian, Phys. Rev. B 80, 041405 (2009). 10.1103/PhysRevB.80.041405
8. D. Huertas-Hernando, F. Guinea, and A. Brataas, Phys. Rev. B 74, 155426 (2006). 10.1103/PhysRevB.74.155426
9. M. Popinciuc, C. Jozsa, P. J. Zomer, N. Tombros, A. Veligura, H. T. Jonkman, and B. J. van Wees, Phys. Rev. B 80, 214427 (2009). 10.1103/PhysRevB.80.214427
10. W. Han, K. Pi, K. M. McCreary, Y. Li, J. J. I. Wong, A. G. Swartz, and R. K. Kawakami, Phys. Rev. Lett. 105, 167202 (2010). 10.1103/PhysRevLett.105. 167202
11. C. Jozsa, T. Maassen, M. Popinciuc, P. J. Zomer, A. Veligura, H. T. Jonkman, and B. J. van Wees, Phys. Rev. B 80, 241403 (2009). 10.1103/PhysRevB.80.241403
12. S. Jo, D.-K. Ki, D. Jeong, H.-J. Lee, and S. Kettemann, Phys. Rev. B 84, 075453 (2011). 10.1103/PhysRevB.84.075453
13. T. Maassen, F. K. Dejene, M. H. D. Guimaraes, C. Józsa, and B. J. van Wees, Phys. Rev. B 8, 3 115410 (2011). 10.1103/PhysRevB.83.115410
14. A. Avsar, Nano Lett. 11, 2363 (2011). 10.1021/nl200714q
15. X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrom, and P. A. Crowell, Phys. Rev. Lett. 96, 176603 (2006). 10.1103/PhysRevLett.96.176603
16. J. Kim and T. Kim, JOM 61, 17 (2009). 10.1007/s11837-009-0082-y
17. A. Van Bommel, J. Crombeen, and A. Van Tooren, Surf. Sci. 48, 463 (1975). 10.1016/0039-6028(75)90419-7
18. I. Forbeaux, J.-M. Themlin, A. Charrier, F. Thibaudau, and J.-M. Debever, Appl. Surf. Sci. 162-163, 406 (2000). 10.1016/S0169-4332(00)00224-5
19. C. Berger, J. Phys. Chem. B 108, 19912 (2004). 10.1021/jp040650f
20. C. Dimitrakopoulos, A. Grill, T. J. McArdle, Y. M. Lin, Z. Liu, D. Pfeiffer, R. Wisnieff, and Ph. Avouris, GraphITA, 15-18 May 2011, Gran Sasso National Laboratory (Assergi-L'Aquila Italy), Invited extended abstract L05 (pp. 1-4), URL: http://graphita.bo.imm.cnr.it/program.html#SessionD
21. C. Dimitrakopoulos, J. Vac. Sci. Technol. B 28, 985 (2010). 10.1116/1.3480961
22. C. Dimitrakopoulos, A. Grill, T. J. McArdle, Z. Liu, R. Wisnieff, and D. A. Antoniadis, Appl. Phys. Lett. 98, 222105 (2011). 10.1063/1.3595945
23. T. C. Isabell, P. E. Fischione, C. O'Keefe, M. U. Guruz, and V. P. Dravid, Microsc. Microanal. 5, 126 (1999). 10.1017/S1431927699000094
24. X. Wang, S. M. Tabakman, and H. Dai, J. Am. Chem. Soc. 130, 8152 (2008). 10.1021/ja8023059
25. D. B. Farmer, Y.-M. Lin, A. Afzali-Ardakani, and P. Avouris, Appl. Phys. Lett. 94, 213106 (2009). 10.1063/1.3142865
26. C. Wang, Q. Cao, T. Ozel, A. Gaur, J. A. Rogers, and M. Shim, J. Am. Chem. Soc. 127, 11460 (2005). 10.1021/ja0526564
27. D. B. Farmer, R. Golizadeh-Mojarad, V. Perebeinos, Y.-M. Lin, G. S. Tulevski, J. C. Tsang, and P. Avouris, Nano Lett. 9, 388 (2009). 10.1021/nl803214a
28. D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Chem. Mater. 14, 4350 (2002). 10.1021/cm020357x
29. D. B. Farmer and R. G. Gordon, Electrochem. Solid-State Lett. 8, G89 (2005). 10.1149/1.1862474
30. L. M. Malard, M. A. Pimenta, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rep. 473, 51 (2009). 10.1016/j.physrep.2009.02.003
31. F. J. Jedema, H. R. Heersche, A. T. Filip, J. J. A. Baselmans, and B. J. van Wees, Nature (London) 416, 713 (2002). 10.1038/416713a