Controlling the efficiency of spin injection into graphene by carrier drift

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 8, 2009, Pages

  Jozsa C ^a   Popinciuc, M ^a   Tombros, N ^a   Jonkman, H T ^a   Van Wees, B J ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 61549141384     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.081402     Document Type: Article

References (19)

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19. The gate voltage applied on the graphene was efficiently screened by the proximity of the metal electrode therefore under the ferromagnetic contacts the carrier type was insensitive to gating, remaining p type. Furthermore, the electrostatic effect of the contact voltage bias on the density underneath the contacts proved not to be enough to change the graphene to n type.