Empirical modeling of metal-contact effects on graphene field-effect transistors

Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

  Nouchi, Ryo ^a   Tanigaki, Katsumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; CHARGE-CARRIER MOBILITY; DIFFUSIVE TRANSPORT; DOPING LEVELS; ELECTRON HOLE; EMPIRICAL MODEL; EMPIRICAL MODELING; METAL CONTACTS; METALLIC ELECTRODES; MODEL CALCULATIONS; TRANSFER CHARACTERISTICS; VARIED PARAMETERS;

CARRIER MOBILITY; GRAPHENE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79960678926     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.070109     Document Type: Article

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