Large-scale fabrication of BN tunnel barriers for graphene spintronics

Journal of Applied Physics

Volumn 116, Issue 7, 2014, Pages

  Fu, Wangyang ^a   Makk, Péter ^a   Maurand, Romain ^a   Bräuninger, Matthias ^a   Schönenberger, Christian ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MAGNETOELECTRONICS; MONOLAYERS;

CHEMICAL VAPOR DEPOSITIONS (CVD); EXFOLIATED GRAPHENE; FERROMAGNETIC CONTACTS; HEXAGONAL BORON NITRIDE; LARGE-SCALE FABRICATION; SPIN RELAXATION TIME; SPINTRONIC APPLICATIONS; TUNNEL BARRIER MATERIALS;

GRAPHENE;

EID: 84906542761     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4893578     Document Type: Article

References (33)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Girsov, " Electric field effect in atomically thin carbon films," Science 306, 666 (2004). 10.1126/science.1102896
2. L. Wang, I. Meric, P. Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. M. Campos, D. A. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, and C. R. Dean, " One-dimensional electrical contact to a two-dimensional material," Science 342, 614 (2013). 10.1126/science.1244358
3. P. Seneor, B. Dlubak, M.-B. Martin, A. Anane, H. Jaffres, and A. Fert, " Spintronics with graphene," MRS Bull. 37, 1245 (2012). 10.1557/mrs.2012.277
4. B. Dlubak, M.-B. Martin, C. Deranlot, B. Servet, S. Xavier, R. Mattana, M. Sprinkle, C. Berger, W. A. De Heer, F. Petroff, A. Anane, P. Seneor, and A. Fert, " Highly efficient spin transport in epitaxial graphene on SiC," Nat. Phys. 8, 557 (2012). 10.1038/nphys2331
5. A. Dankert, M. V. Kamalakar, J. Bergsten, and S. P. Dash, " Spin transport and precession in graphene measured by nonlocal and three-terminal methods," Appl. Phys. Lett. 104, 192403 (2014). 10.1063/1.4876060
6. B. Birkner, D. Pachniowski, A. Sandner, M. Ostler, T. Seyller, J. Fabian, M. Ciorga, D. Weiss, and J. Eroms, " Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC," Phys. Rev. B 87, 081405(R) (2013). 10.1103/PhysRevB.87.081405
7. C. Volk, C. Neumann, S. Kazarski, S. Fringes, S. Engels, F. Haupt, A. Müller, and C. Stampfer, " Probing relaxation times in graphene quantum dots," Nat. Commun. 4, 1753 (2013). 10.1038/ncomms2738
8. H. Idzuchi, Y. Fukuma, S. Takahashi, S. Maekawa, and Y. Otani, " Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves," Phys. Rev. B 89, 081308(R) (2014). 10.1103/PhysRevB.89.081308
9. N. Tombros, C. Jozsa, M. Popinciuc, H. T. Jonkman, and B. J. van Wees, " Electronic spin transport and spin precession in single graphene layers at room temperature," Nature 448, 571 (2007). 10.1038/nature06037
10. M. Popinciuc, C. Józsa, P. J. Zomer, N. Tombros, A. Veligura, H. T. Jonkman, and B. J. van Wees, " Electronic spin transport in graphene field-effect transistors," Phys. Rev. B 80, 214427 (2009). 10.1103/PhysRevB.80.214427
11. W. Han and R. K. Kawakami, " Spin relaxation in single-layer and bilayer graphene," Phys. Rev. Lett. 107, 047207 (2011). 10.1103/PhysRevLett.107.047207
12. T.-Y. Yang, J. Balakrishnan, F. Volmer, A. Avsar, M. Jaiswal, J. Samm, S. R. Ali, A. Pachoud, M. Zeng, M. Popinciuc, G. Güntherodt, B. Beschoten, and B. Özyilmaz, " Observation of long spin-relaxation times in bilayer graphene at room temperature," Phys. Rev. Lett. 107, 047206 (2011). 10.1103/PhysRevLett.107.047206
13. M. Drögeler, F. Volmer, M. Wolter, B. Terrés, K. Watanabe, T. Taniguchi, G. Gütherodt, C. Stampfer, and B. Beschoten, " Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature," e-print arXiv:1406.2439.
14. P. J. Zomer, M. H. D. Guimarães, N. Tombros, and B. J. van Wees, " Long-distance spin transport in high-mobility graphene on hexagonal boron nitride," Phys. Rev. B 86, 161416(R) (2012). 10.1103/PhysRevB.86.161416
15. B. Dlubak, P. R. Kidambi, R. S. Weatherup, S. Hofmann, and J. Robertson, " Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition," Appl. Phys. Lett. 100, 173113 (2012). 10.1063/1.4707376
16. M. H. D. Guimarães, A. Veligura, P. J. Zomer, T. Maassen, I. J. Vera-Marun, N. Tombros, and B. J. van Wees, " Spin transport in high-quality suspended graphene devices," Nano Lett. 12, 3512 (2012). 10.1021/nl301050a
17. X. S. Li, W. W. Cai, J. An, S. Kim, J. Nah, D. X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, " Large-area synthesis of high-quality and uniform graphene films on copper foils," Science 324, 1312 (2009). 10.1126/science.1171245
18. A. Avsar, T. Yang, S. Bae, J. Balakrishnan, F. Volmer, M. Jaiswal, Z. Yi, S. R. Ali, G. Guüntherodt, B. H. Hong, B. Beschoten, and B. Özyilmaz, " Toward wafer scale fabrication of graphene based spin valve devices," Nano Lett. 11, 2363 (2011). 10.1021/nl200714q
19. E. Sosenko, H. Wei, and V. Aji, " Effect of contacts on spin lifetime measurements in graphene," Phys. Rev. B 89, 245436 (2014). 10.1103/PhysRevB.89.245436
20. W. H. Wang, W. Han, K. Pi, K. M. McCreary, F. Miao, W. Bao, C. N. Lau, and R. K. Kawakami, " Growth of atomically smooth MgO films on graphene by molecular beam epitaxy," Appl. Phys. Lett. 93, 183107 (2008). 10.1063/1.3013820
21. J. A. Robinson, M. LaBella, K. A. Trumbull, X. Weng, R. Cavelero, T. Daniels, Z. Hughes, M. Hollander, M. Fanton, and D. Snyder, " Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties," ACS Nano 4, 2667 (2010). 10.1021/nn1003138
22. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, " Two-dimensional atomic crystals," Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005). 10.1073/pnas.0502848102
23. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. Castro Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, " Electron tunneling through ultrathin boron nitride crystalline barriers," Nano Lett. 12, 1707 (2012). 10.1021/nl3002205
24. I. Meric, C. R. Dean, N. Petrone, L. Wang, J. Hone, P. Kim, and K. L. Shepard, " Graphene field-effect transistors based on boron nitride dielectrics," Proc. IEEE 101, 1609 (2013). 10.1109/JPROC.2013.2257634
25. T. Yamaguchi, Y. Inoue, S. Masubuchi, S. Morikawa, M. Onuki, K. Watanabe, T. Taniguchi, R. Moriya, and T. Machida, " Electrical spin injection into graphene through monolayer hexagonal boron nitride," Appl. Phys. Express 6, 073001 (2013). 10.7567/APEX.6.073001
26. W. Fu, C. Nef, O. Knopfmacher, A. Tarasov, M. Weiss, M. Calame, and C. Schönenberger, " Graphene transistors are insensitive to pH changes in solution," Nano Lett. 11, 3597 (2011). 10.1021/nl201332c
27. See https://graphene-supermarket.com/ for Single layer h-BN (Boron Nitride) film grown on copper foil.
28. M. Johnson and R. H. Silsbee, " Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals," Phys. Rev. Lett. 55, 1790 (1985). 10.1103/PhysRevLett.55.1790
29. P. C. van Son, H. van Kempen, and P. Wyder, " Boundary resistance of the ferromagnetic-nonferromagnetic metal interface," Phys. Rev. Lett. 58, 2271 (1987). 10.1103/PhysRevLett.58.2271
30. F. J. Jedema, H. B. Heersche, A. T. Filip, J. J. A. Baselmans, and B. J. van Wees, " Electrical detection of spin precession in a metallic mesoscopic spin valve," Nature 416, 713 (2002). 10.1038/416713a
31. H. Aurich, A. Baumgartner, F. Freitag, A. Eichler, J. Trbovic, and C. Schönenberger, " Permalloy-based carbon nanotube spin-valve," Appl. Phys. Lett. 97, 153116 (2010). 10.1063/1.3502600
32. H. Jaffrès, J.-M. George, and A. Fert, " Spin transport in multiterminal devices: Large spin signals in devices with confined geometry," Phys. Rev. B 82, 140408(R) (2010). 10.1103/PhysRevB.82.140408
33. M. Venkata Kamalakar, A. Dankert, J. Bergsten, T. Ive, and S. P. Dash, " Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride," e-print arXiv:1406.5827.