Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 4049-4052

  Jiménez, David ^a   Moldovan, Oana ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Analog; field effect transistor (FET); graphene; modeling; radio frequency (RF)

Indexed keywords

ANALOG; BAND GAP ENGINEERING; CLOSED-FORM EXPRESSION; DRIFT DIFFUSION; FIELD-EFFECT; PHYSICS-BASED MODELS; PREDICTIVE BEHAVIORS; PROTOTYPE DEVICES; RADIO FREQUENCY (RF); RADIO-FREQUENCY APPLICATIONS; RF APPLICATIONS;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; GRAPHENE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80054954449     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2163517     Document Type: Article

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