Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices

2D Materials

Volumn 2, Issue 2, 2015, Pages

  Volmer, Frank ^a   Drögeler, Marc ^a   Pohlmann, Tobias ^a   Güntherodt, Gernot ^a   Stampfer, Christoph ^a   Beschoten, Bernd ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Baseline resistance; Graphene; Interface; Quantum capacitance; Spin transport

Indexed keywords

CAPACITANCE; GRAPHENE; INTERFACES (MATERIALS); MAGNETIC DEVICES; MAGNETORESISTANCE; QUANTUM CHEMISTRY; VOLTAGE MEASUREMENT;

ELECTRICAL SPIN INJECTION; NON-LOCAL MEASUREMENT; PERPENDICULAR MAGNETIC FIELDS; QUANTUM CAPACITANCE; REFERENCE MEASUREMENTS; SPATIALLY INHOMOGENEOUS; SPIN INJECTION AND DETECTIONS; SPIN TRANSPORT;

SPIN HALL EFFECT;

EID: 84946512603     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/2/024001     Document Type: Article

References (34)

1. Han W, Pi K, McCreary KM, Li Y, Wong J J I, SwartzAG and Kawakami RK2010 Tunneling spin injection into single layer graphene Phys. Rev. Lett. 105 167202
2. Maassen T, Vera-Marun I J, GuimarãesMH D and van Wees B J 2012 Contact-induced spin relaxation in Hanle spin precession measurements Phys. Rev. B 86 235408
3. Dlubak B et al 2012 Highly efficient spin transport in epitaxial graphene on SiC Nat. Phys. 8 557-61
4. Volmer F, Drögeler M, Maynicke E, von den Driesch N, BoschenML, GüntherodtG and Beschoten B 2013 Role of mgo barriers for spin and charge transport in Co/MgO/ graphene nonlocal spin-valve devices Phys. Rev. B 88 161405
5. Volmer F, Drögeler M, Maynicke E, von den Driesch N, BoschenML, Güntherodt G, Stampfer Cand Beschoten B 2014 Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments Phys. Rev. B 90 165403
6. Akerman J J, Escudero R, Leighton C, Kim S, RabsonDA, Dave RW, Slaughter JMand Schuller IK2002 Criteria for ferromagnetic-insulator-ferromagnetic tunneling J. Magn. Magn. Mater. 240 86-91
7. Jonsson-Akerman B J, Escudero R, Leighton C, Kim S, Schuller IKand RabsonDA 2000 Reliability of normal-state current-voltage characteristics as an indicator of tunneljunction barrier quality Appl. Phys. Lett. 77 1870-2
8. RabsonDA, Jonsson-Akerman B J, Romero AH, Escudero R, Leighton C, Kim S and Schuller IK2001 Pinholes may mimic tunneling J. Appl. Phys. 89 2786-90
9. Oliver B, He Q, TangX and Nowak J 2003 Tunneling criteria and breakdown for low resistive magnetic tunnel junctions J. Appl. Phys. 94 1783-6
10. DrögelerM, Volmer F, WolterM, TerresB, WatanabeK, TaniguchiT, GüntherodtG, StampferCand Beschoten B 2014 Nanosecond spin lifetimes in single-and few-layer graphene-hbn heterostructures at room temperatureNano Lett. 14 6050-5
11. Bakker F L, Slachter A, Adam J-P and van Wees B J 2010 Interplay of Peltier and Seebeck effects in nanoscale nonlocal spin valves Phys. Rev. Lett. 105 136601
12. JohnsonMand Silsbee RH2007 Calculation of nonlocal baseline resistance in a quasi-one-dimensional wire Phys. Rev. B 76 153107
13. Tombros N, Tanabe S, Veligura A, Jozsa C, Popinciuc M, JonkmanHT and van Wees B J 2008 Anisotropic spin relaxation in graphene Phys. Rev. Lett. 101 046601
14. GuimaraesMHD, Veligura A, Zomer P J, Maassen T, Vera-Marun I J, TombrosNand van Wees B J 2012 Spin transport in high-quality suspended graphene devices Nano Lett. 12 3512-7
15. Popinciuc M, Józsa C, Zomer P J, Tombros N, Veligura A, JonkmanHT and van Wees B J 2009 Electronic spin transport in graphene field-effect transistors Phys. Rev. B 80 214427
16. Wojtaszek M, Vera-Marun I J, Maassen T and van Wees B J 2013 Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices Phys. Rev. B 87 081402
17. SwartzAG, Chen J-R, McCrearyKM, Odenthal PM, HanWandKawakamiRK2013 Effect of in situ deposition ofMg adatoms on spin relaxation in graphene Phys.Rev.B87 075455
18. PiK, HanW, McCrearyKM, SwartzAG, LiYand KawakamiRK2010Manipulationof spin transport in graphene by surface chemical doping Phys.Rev. Lett. 104 187201
19. Han W, Pi K, Bao W, McCreary KM, Li Y, WangWH, Lau CNand Kawakami RK2009 Electrical detection of spin precession in single layer graphene spin valves with transparent contacts Appl. Phys. Lett. 94 222109
20. McCrearyKM, SwartzAG, HanW, Fabian J andKawakamiRK 2012 Magnetic moment formation in graphene detected by scattering of pure spin currents Phys.Rev. Lett. 109 186604
21. GuimarãesMHD, Zomer P J, Ingla-Aynés J, Brant JC, TombrosNand van Wees B J 2014 Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field Phys. Rev. Lett. 113 086602
22. Idzuchi H, Fukuma Y and Otani Y 2012 Towards coherent spin precession in pure-spin current Sci. Rep. 2 628
23. YangT-Yet al 2011Observation of long spin-relaxation times in bilayer graphene at roomtemperature Phys.Rev. Lett. 107 047206
24. Fabian J, Matos-Abiague A, Ertler C, Stano P and Žutić I 2007 Semiconductor spintronics Acta Phys. Slovaca 57 565-907
25. JohnsonMand Silsbee RH1988 Coupling of electronic charge and spin at a ferromagnetic-paramagnetic met al interface Phys. Rev. B 37 5312-25
26. LinY-C, LuC-C, YehC-H, JinC, SuenagaKandChiuP-W2012 Graphene annealing:how clean can it be? Nano Lett. 12 414-9
27. Zan R, Bangert U, RamasseQand NovoselovKS 2012 Interaction of met als with suspended graphene observed by transmission electron microscopy J. Phys. Chem. Lett. 3 953-8
28. Mueller T, Xia F, Freitag M, Tsang J and Avouris P 2009 Role of contacts in graphene transistors: a scanning photocurrent study Phys. Rev. B 79 245430
29. Dash S P, Sharma S, Breton JCL, Peiro J, Jaffrès H, George J-M, LemaîtreA and Jansen R 2011 Spin precession and inverted Hanle effect in a semiconductor near a finiteroughness ferromagnetic interface Phys. Rev. B 84 054410
30. Muduli PK, Barzola-Quiquia J, Dusari S, Ballestar A, Bern F, BhlmannWand Esquinazi P 2013 Large local Hall effect in pin-hole dominated multigraphene spin-valves Nanotechnology 24 015703
31. Luryi S 1988 Quantum capacitance devices Appl. Phys. Lett. 52 501-3
32. Fang T, Konar A, XingHand JenaD2007 Carrier statistics and quantum capacitance of graphene sheets and ribbons Appl. Phys. Lett. 91 092109
33. Xu H, Zhang Z, Wang Z, Wang S, LiangXand Peng L-M 2011 Quantum capacitance limited vertical scaling of graphene field-effect transistor ACS Nano 5 2340-7
34. Xia F, Mueller T, Lin Y, Valdes-Garcia A and Avouris P 2009 Ultrafast graphene photodetector Nat. Nanotechnol. 4 839-43