Quantum capacitance limited vertical scaling of graphene field-effect transistor

ACS Nano

Volumn 5, Issue 3, 2011, Pages 2340-2347

  Xu, Huilong ^a   Zhang, Zhiyong ^a   Wang, Zhenxing ^a   Wang, Sheng ^a   Liang, Xuelei ^a   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

gate dielectric; graphene field effect transistor; quantum capacitance; vertical scaling; yttrium oxide

Indexed keywords

C-V CHARACTERISTIC; DIELECTRIC LAYER; EQUIVALENT OXIDE THICKNESS; GATE CAPACITANCE; GATE DIELECTRIC LAYERS; GATE LENGTH; GATE OXIDE; GATE VOLTAGES; HIGH QUALITY; OXIDE CAPACITANCE; QUANTUM CAPACITANCE; RELATIVE DIELECTRIC CONSTANT; TOP-GATE; VERTICAL SCALING;

CAPACITANCE; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM OXIDE;

FIELD EFFECT TRANSISTORS;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CAPACITANCE; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; SEMICONDUCTOR;

ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MATERIALS TESTING; NANOSTRUCTURES; TRANSISTORS, ELECTRONIC;

EID: 79952961488     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200026e     Document Type: Article

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