230% room-temperature magnetoresistance in CoFeBMgOCoFeB magnetic tunnel junctions

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Djayaprawira, David D ^a   Tsunekawa, Koji ^a   Nagai, Motonobu ^a   Maehara, Hiroki ^a   Yamagata, Shinji ^a   Watanabe, Naoki ^a   Yuasa, Shinji ^b,c   Suzuki, Yoshishige ^b,d   Ando, Koji ^b  

^a Canon ANELVA Technix Corporation   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; CRYSTAL GROWTH; ELECTROCHEMICAL ELECTRODES; FERROMAGNETIC MATERIALS; MAGNETORESISTANCE; MICROSTRUCTURE; POLYCRYSTALLINE MATERIALS; TEXTURES; THERMAL EFFECTS;

FREE LAYERS; MAGNETIC TUNNEL JUNCTIONS (MTJ); ROOM TEMPERATURE (RT); TUNNELING RESISTANCE;

TUNNEL JUNCTIONS;

EID: 17044387382     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1871344     Document Type: Article

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