Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 33, Issue 3, 2015, Pages

  Muneshwar, Triratna ^a   Cadien, Ken ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILMS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRONS; INTEGRATED CIRCUIT INTERCONNECTS; NITRIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; TEMPERATURE; TRANSITION METALS; ZIRCONIUM;

HIGH THERMAL STABILITY; III-V SEMICONDUCTOR DEVICES; LOW TEMPERATURE PLASMAS; PHOTO-ELECTRON EMISSION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SUBSTRATE TEMPERATURE; TRANSITION METAL NITRIDES; ZIRCONIUM NITRIDE (ZRN);

ATOMIC LAYER DEPOSITION;

EID: 84925070897     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.4915122     Document Type: Article

References (71)

1. H. O. Pierson, Handbook of Refractory Carbides and Nitrides: Properties, Characteristics, Processing, and Applications (Noyes Publications, Park Ridge, NJ, 1996).
2. L. Gribaudo, D. Arias, and J. Abriata, J. Phase Equilib. 15, 441 (1994). 10.1007/BF02647575
3. T. Chihi, M. Fatmi, B. Ghebouli, and M. Guemmaz, Solid State Sci. 13, 1414 (2011). 10.1016/j.solidstatesciences.2011.04.014
4. D. I. Bazhanov, A. A. Knizhnik, A. A. Safonov, A. A. Bagatur'yants, M. W. Stoker, and A. A. Korkin, J. Appl. Phys. 97, 044108 (2005). 10.1063/1.1851000
5. L. Porte, Solid State Commun. 50, 303 (1984). 10.1016/0038-1098(84)90373-9
6. P. Prieto, J. Vac. Sci. Technol., A 14, 3181 (1996). 10.1116/1.580210
7. J. Sanz, L. Soriano, P. Prieto, G. Tyuliev, C. Morant, and E. Elizalde, Thin Solid Films 332, 209 (1998). 10.1016/S0040-6090(98)01058-X
8. A. Fragiel, M. H. Staia, J. Muñoz-Saldaña, E. S. Puchi-Cabrera, C. Cortes-Escobedo, and L. Cota, Surf. Coat. Technol. 202, 3653 (2008). 10.1016/j.surfcoat.2008.01.001
9. V. Braic, M. Balaceanu, and M. Braic, International Semiconductor Conference (IEEE, 2008), pp. 267-270.
10. W. Meng, G. Eesley, and K. Svinarich, Phys. Rev. B 42, 4881 (1990). 10.1103/PhysRevB.42.4881
11. W. J. Meng, D. T. Morelli, D. M. Roessler, and J. Heremans, J. Appl. Phys. 69, 846 (1991). 10.1063/1.347320
12. W. J. Meng, J. Vac. Sci. Technol., A 10, 1610 (1992). 10.1116/1.578031
13. I. Hase and Y. Nishihara, Phys. Rev. B 60, 1573 (1999). 10.1103/PhysRevB.60.1573
14. J. Adachi, K. Kurosaki, M. Uno, and S. Yamanaka, J. Alloys Compd. 399, 242 (2005). 10.1016/j.jallcom.2005.03.005
15. B. Saha, J. Acharya, T. D. Sands, and U. V. Waghmare, J. Appl. Phys. 107, 033715 (2010). 10.1063/1.3291117
16. M. B. Takeyama, A. Noya, and K. Sakanishi, J. Vac. Sci. Technol., B 18, 1333 (2000). 10.1116/1.591382
17. C.-S. Chen, C.-P. Liu, H.-G. Yang, and C. Y. A. Tsao, J. Vac. Sci. Technol., B 22, 1075 (2004). 10.1116/1.1738669
18. L. C. Leu, P. Sadik, D. P. Norton, L. McElwee-White, and T. J. Anderson, J. Vac. Sci. Technol., B 26, 1723 (2008). 10.1116/1.2976571
19. S. E. Mohney, B. P. Luther, S. D. Wolter, T. N. Jackson, R. F. Karlicek, and R. S. Kern, Fourth International High Temperature Electronics Conference, HITEC (IEEE, 1998), pp. 134-137.
20. J. Westlinder, J. Malmström, G. Sjöblom, and J. Olsson, Solid-State Electron. 49, 1410 (2005). 10.1016/j.sse.2005.06.021
21. S. Horita, T. Toda, and H. Kasagawa, J. Korean Phys. Soc. 42, 1142 (2003). 10.3938/jkps.42.1142
22. S. M. George, Chem. Rev. 110, 111 (2010). 10.1021/cr900056b
23. R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005). 10.1063/1.1940727
24. N. Farkas, G. Zhang, R. D. Ramsier, E. A. Evans, and J. A. Dagata, J. Vac. Sci. Technol., A 26, 297 (2008). 10.1116/1.2839856
25. K. DongHo, K. ChulMin, K. EunHong, S. YoungChul, K. TaeGeun, R. CheongHyun, and H. Cheol-Koo, J. Korean Phys. Soc. 55, 1149 (2009). 10.3938/jkps.55.1149
26. B. O. Johansson, H. T. G. Hentzell, J. M. E. Harper, and J. J. Cuomo, J. Mater. Res. 1, 442 (2011). 10.1557/JMR.1986.0442
27. R. P. Netterfield, P. J. Martin, and D. R. McKenzie, J. Mater. Sci. Lett. 9, 972 (1990). 10.1007/BF00722192
28. A. Straboni, L. Pichon, and T. Girardeau, Surf. Coat. Technol. 125, 100 (2000). 10.1016/S0257-8972(99)00607-6
29. K. Sugiyama, J. Electrochem. Soc. 122, 1545 (1975). 10.1149/1.2134060
30. D. M. Hoffman, Polyhedron 13, 1169 (1994). 10.1016/S0277-5387(00)80253-3
31. R. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater. 3, 1138 (1991). 10.1021/cm00018a034
32. H. Wendel and H. Suhr, Appl. Phys. A 54, 389 (1992). 10.1007/BF00324208
33. J. S. Becker, E. Kim, and R. G. Gordon, Chem. Mater. 16, 3497 (2004). 10.1021/cm049516y
34. S. Cho, K. Lee, P. Song, H. Jeon, and Y. Kim, Jpn. J. Appl. Phys., Part 1 46, 4085 (2007). 10.1143/JJAP.46.4085
35. H. Kim, C. Detavenier, O. van der Straten, S. M. Rossnagel, A. J. Kellock, and D.-G. Park, J. Appl. Phys. 98, 014308 (2005). 10.1063/1.1935761
36. P. Caubet et al., J. Electrochem. Soc. 155, H625 (2008). 10.1149/1.2940306
37. E.-J. Kim and D.-H. Kim, Electrochem. Solid-State Lett. 9, C123 (2006). 10.1149/1.2206884
38. E. Langereis, H. C. M. Knoops, A. J. M. Mackus, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 102, 083517 (2007). 10.1063/1.2798598
39. J.-S. Park, M.-J. Lee, C.-S. Lee, and S.-W. Kang, Electrochem. Solid-State Lett. 4, C17 (2001). 10.1149/1.1353160
40. K. Knapas and M. Ritala, Crit. Rev. Solid State Mater. Sci. 38, 167 (2013). 10.1080/10408436.2012.693460
41. E. Langereis, S. B. S. Heil, H. C. M. Knoops, W. Keuning, M. C. M. van de Sanden, and W. M. M. Kessels, J. Phys. Appl. Phys. 42, 073001 (2009). 10.1088/0022-3727/42/7/073001
42. M. Yasaka, Rigaku J. 26, 1 (2010).
43. M. Björck and G. Andersson, J. Appl. Crystallogr. 40, 1174 (2007). 10.1107/S0021889807045086
44. G. A. Bootsma and F. Meyer, Surf. Sci. 14, 52 (1969). 10.1016/0039-6028(69)90045-4
45. F. H. P. M. Habraken, O. L. J. Gijzeman, and G. A. Bootsma, Surf. Sci. 96, 482 (1980). 10.1016/0039-6028(80)90322-2
46. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications (Wiley, West Sussex, UK, 2007).
47. H. G. Tompkins and E. A. Irene, Handbook of Ellipsometry (William Andrew, New York, 2005).
48. R. Kleim, L. Kuntzler, and A. E. Ghemmaz, J. Opt. Soc. Am. A 11, 2550 (1994). 10.1364/JOSAA.11.002550
49. A. V. Tikhonravov, M. K. Trubetskov, E. Masetti, A. V. Krasilnikova, and I. V. Kochikov, Advances in Optical Interference Coating, edited by C. Amra and H. A. Macleod (1999), pp. 173-182.
50. A. Lehmuskero, M. Kuittinen, and P. Vahimaa, Opt. Express 15, 10744 (2007). 10.1364/OE.15.010744
51. S. A. Kovalenko and M. P. Lisitsa, Semicond. Phys., Quantum Electron. Optoelectron. 4, 352 (2001), available at http://journal-spqeo.org.ua/n4-2001/352-401.htm.
52. C. G. Ribbing and A. Roos, Handbook of Optical Constants of Solids (Academic Press, Burlington, 1997), pp. 351-369.
53. D. Valerini, M. A. Signore, A. Rizzo, and L. Tapfer, J. Appl. Phys. 108, 083536 (2010). 10.1063/1.3493267
54. M. A. Signore, D. Valerini, L. Tapfer, G. Caretto, and A. Rizzo, J. Vac. Sci. Technol., A 29, 061507 (2011). 10.1116/1.3646147
55. R. L. Puurunen et al., J. Appl. Phys. 96, 4878 (2004). 10.1063/1.1787624
56. T. Muneshwar and K. Cadien, Appl. Surf. Sci. 328, 344 (2015). 10.1016/j.apsusc.2014.12.044
57. M. A. Alam and M. L. Green, J. Appl. Phys. 94, 3403 (2003). 10.1063/1.1599978
58. R. L. Puurunen and W. Vandervorst, J. Appl. Phys. 96, 7686 (2004). 10.1063/1.1810193
59. J.-W. Lim, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc. 148, C403 (2001). 10.1149/1.1368102
60. C. E. Bouldin, W. E. Wallace, G. W. Lynn, S. C. Roth, and W. L. Wu, J. Appl. Phys. 88, 691 (2000). 10.1063/1.373722
61. I.-W. Kim, S.-J. Kim, D.-H. Kim, H. Woo, M.-Y. Park, and S.-W. Rhee, Korean J. Chem. Eng. 21, 1256 (2004). 10.1007/BF02719504
62. Z. Fang, P. A. Williams, R. Odedra, H. Jeon, and R. J. Potter, J. Cryst. Growth 338, 111 (2012). 10.1016/j.jcrysgro.2011.10.049
63. H. Kim, A. J. Kellock, and S. M. Rossnagel, J. Appl. Phys. 92, 7080 (2002). 10.1063/1.1519949
64. J. Swerts, A. Delabie, M. M. Salimullah, M. Popovici, M.-S. Kim, M. Schaekers, and S. Van Elshocht, ECS Solid State Lett. 1, P19 (2012). 10.1149/2.003202ssl
65. I. Milošev, Surf. Sci. Spectra 5, 152 (1998). 10.1116/1.1247861
66. P. Prieto, L. Galán, and J. Sanz, Phys. Rev. B 47, 1613 (1993). 10.1103/PhysRevB.47.1613
67. A. L. Ivanovskii, N. I. Medvedeva, and S. V. Okatov, Inorg. Mater. 37, 459 (2001). 10.1023/A:1017568515295
68. P. Prieto, L. Galán, and J. M. Sanz, Surf. Interface Anal. 21, 395 (1994). 10.1002/sia.740210612
69. K. Håkansson, H. Johansson, and L. Johansson, Phys. Rev. B 48, 2623 (1993). 10.1103/PhysRevB.48.2623
70. H. Ihara, M. Hirabayashi, and H. Nakagawa, Phys. Rev. B 14, 1707 (1976). 10.1103/PhysRevB.14.1707
71. J.-S. Park, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc. 149, C28 (2002). 10.1149/1.1423642