Low-resistivity ZrNx metal gate in MOS devices

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1410-1413

  Westlinder, J ^a   Malmstrom J ^a   Sjoblom G ^a   Olsson, J ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Metal gate; Work function; Zirconium nitride

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC CONDUCTIVITY; FUNCTIONS; MOSFET DEVICES; SPUTTER DEPOSITION; THIN FILMS; ZIRCONIUM COMPOUNDS;

GAS FLOW; METAL GATE; WORK FUNCTION; ZIRCONIUM NITRIDE;

GATES (TRANSISTOR);

EID: 24144431599     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.021     Document Type: Article

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