TiN and ZrN based ohmic contacts to n-GaN

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 134-137

  Mohney, S E ^a   Luther, B P ^a   Wolter, S D ^a   Jackson, T N ^a   Karlicek, R F ^b   Kern, R S ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b EMCORE Corporation   (United States)

^c Product Development Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; III-V SEMICONDUCTORS; OHMIC CONTACTS; TIN; TRANSITION METALS; WIDE BAND GAP SEMICONDUCTORS; ZIRCONIUM COMPOUNDS;

EARLY TRANSITION METALS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CONTACTS; HIGH TEMPERATURE DEVICE; HIGH TEMPERATURE MATERIALS; III-V NITRIDES;

TITANIUM COMPOUNDS;

EID: 84925060708     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676774     Document Type: Conference Paper

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