-
1
-
-
0029376079
-
Zirconium carbonitride films produced by plasma-assisted metal organic chemical vapor deposition
-
Berndt, H., Zeng, A.-Q., Stock, H.-R. and Mayr, P., "Zirconium Carbonitride Films Produced by Plasma-assisted Metal Organic Chemical Vapor Deposition" Surf. Coating Technol., 74, 369 (1995).
-
(1995)
Surf. Coating Technol.
, vol.74
, pp. 369
-
-
Berndt, H.1
Zeng, A.-Q.2
Stock, H.-R.3
Mayr, P.4
-
2
-
-
0041630583
-
Optimization of the deposition process of ZrN and TiN thin films on Si(100) using design of experiment method
-
Chou, W.-J., Sun, C.-H., Yu, G.-P. and Huang, J.-H., "Optimization of the Deposition Process of ZrN and TiN Thin Films on Si(100) using Design of Experiment Method," Mater. Chem. Phys., 82, 228 (2003).
-
(2003)
Mater. Chem. Phys.
, vol.82
, pp. 228
-
-
Chou, W.-J.1
Sun, C.-H.2
Yu, G.-P.3
Huang, J.-H.4
-
3
-
-
0034245114
-
Synthesis of stoichiometric zirconium nitride by d.c. reactive magnetron sputtering pulsed at low frequency: Characterization by ESCA, SIMS and electron microprobe
-
Dauchot, J. P., Gouttebaron, R., Comelissen, D., Wautelet, M. and Hecq, M., "Synthesis of Stoichiometric Zirconium Nitride by d.c. Reactive Magnetron Sputtering Pulsed at Low Frequency: Characterization by ESCA, SIMS and Electron Microprobe" Surf. Interface Anal., 30, 607 (2000).
-
(2000)
Surf. Interface Anal.
, vol.30
, pp. 607
-
-
Dauchot, J.P.1
Gouttebaron, R.2
Comelissen, D.3
Wautelet, M.4
Hecq, M.5
-
4
-
-
0026971377
-
Infrared studies of the surface and gas phase reactions leading to the growth of titanium nitride thin films from tetrakis(dimethylamido)titanium and ammonia
-
Dubois, L. H., Zegarski, B. R. and Girolami, G. S., "Infrared Studies of the Surface and Gas Phase Reactions Leading to the Growth of Titanium Nitride Thin Films from Tetrakis(dimethylamido)titanium and Ammonia" J. Electrochem. Soc., 139, 3603 (1992).
-
(1992)
J. Electrochem. Soc.
, vol.139
, pp. 3603
-
-
Dubois, L.H.1
Zegarski, B.R.2
Girolami, G.S.3
-
5
-
-
0040641772
-
Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films
-
Fix, R. M., Gordon, R. G. and Huffman, D. M., "Solution-phase Reactivity as a Guide to the Low-temperature Chemical Vapor Deposition of Early-transition-metal Nitride Thin Films" J. Am. Chem. Soc., 112, 7833 (1991).
-
(1991)
J. Am. Chem. Soc.
, vol.112
, pp. 7833
-
-
Fix, R.M.1
Gordon, R.G.2
Huffman, D.M.3
-
6
-
-
0000765347
-
Chemical vapor deposition of nitride thin films
-
Ho̧ffman, D. M., "Chemical Vapor Deposition of Nitride Thin Films" Polyhedron, 13, 1169 (1994).
-
(1994)
Polyhedron
, vol.13
, pp. 1169
-
-
Ho̧ffman, D.M.1
-
7
-
-
0040109700
-
Structure and adhesion of zirconium nitride films formed by reactive magnetron sputtering ion plating and dynamic ion mixing
-
Jin, S., Wen, X. Y., Gong, Z. X. and Zhu, Y C., "Structure and Adhesion of Zirconium Nitride Films Formed by Reactive Magnetron Sputtering Ion Plating and Dynamic Ion Mixing" J. Appl. Phys., 74, 2886 (1993).
-
(1993)
J. Appl. Phys.
, vol.74
, pp. 2886
-
-
Jin, S.1
Wen, X.Y.2
Gong, Z.X.3
Zhu, Y.C.4
-
8
-
-
24644438338
-
Characteristics of chemically vapor deposited TiN films prepared using tetrakis-ethylmethyl-amido-titanium
-
Kim, D.-H., Lim, G.-T., Kim, S.-K, Park, J.-W. and Lee, J.-G., "Characteristics of Chemically Vapor Deposited TiN Films Prepared using Tetrakis-ethylmethyl-amido-titanium" J. We. Sci. Technol. B, 17, 2197 (1999).
-
(1999)
J. We. Sci. Technol. B
, vol.17
, pp. 2197
-
-
Kim, D.-H.1
Lim, G.-T.2
Kim, S.-K.3
Park, J.-W.4
Lee, J.-G.5
-
9
-
-
0021098747
-
Oxidation kinetics of zirconium mononitride thin films
-
Krusin-Elbaum, L. and Wittmer, M., "Oxidation Kinetics of Zirconium Mononitride Thin Films" Thin Solid Films, 107, 111 (1983).
-
(1983)
Thin Solid Films
, vol.107
, pp. 111
-
-
Krusin-Elbaum, L.1
Wittmer, M.2
-
10
-
-
13444269791
-
Impurity acti vated whisker growth of zirconium nitride by chemical vapor deposition
-
Motojima, S., Kani, E., Takahashi, Y. and Sugiyama, K., "Impurity Acti vated Whisker Growth of Zirconium Nitride by Chemical Vapor Deposition" J. Mater. Sci., 14, 1495 (1979).
-
(1979)
J. Mater. Sci.
, vol.14
, pp. 1495
-
-
Motojima, S.1
Kani, E.2
Takahashi, Y.3
Sugiyama, K.4
-
11
-
-
0004225380
-
-
Buttenvorth-Heinemann, Stoneham
-
Murarka, S. P., "Metallization" Buttenvorth-Heinemann, Stoneham, 15 (1993).
-
(1993)
Metallization
, pp. 15
-
-
Murarka, S.P.1
-
12
-
-
0040034199
-
Reactively Sputtered Zirconium Nitride (ZrN) used as an aluminum/silicon diffusion barrier in a zirconium contact to silicon
-
Östling, M., Nygren, S., Petersson, C. S., Norström, H., Wiklund, P., Buchta, R., Blom, H.-O. and Berg, S., "Reactively Sputtered Zirconium Nitride (ZrN) used as an Aluminum/Silicon Diffusion Barrier in a Zirconium Contact to Silicon" J. Vac. Sci. Technol. A, 2, 281 (1984).
-
(1984)
J. Vac. Sci. Technol. A
, vol.2
, pp. 281
-
-
Östling, M.1
Nygren, S.2
Petersson, C.S.3
Norström, H.4
Wiklund, P.5
Buchta, R.6
Blom, H.-O.7
Berg, S.8
-
13
-
-
0030263677
-
Formation of zirconium nitride via mechanochemical processing
-
Puclin, T. and Kaczmarek, W. A., "Formation of Zirconium Nitride Via Mechanochemical Processing" J. Mater. Sci. Lett., 16, 1799 (1996).
-
(1996)
J. Mater. Sci. Lett.
, vol.16
, pp. 1799
-
-
Puclin, T.1
Kaczmarek, W.A.2
-
14
-
-
0035477617
-
ZrN, ZrxAlyN and ZrxGayN thin films
-
Spillmann, H., Willmott, P. R. and Morstein, M. P., "ZrN, ZrxAlyN and ZrxGayN Thin Films" Appl. Phys. A, 73, 441 (2001).
-
(2001)
Appl. Phys. A
, vol.73
, pp. 441
-
-
Spillmann, H.1
Willmott, P.R.2
Morstein, M.P.3
-
15
-
-
84953674118
-
Reactively sputtered nitrides and carbides of titanium, zirconium, and hafnium
-
Sproul, W. D., "Reactively Sputtered Nitrides and Carbides of Titanium, Zirconium, and Hafnium," J. Vac. Sci. Technol. A, 4, 2874 (1986).
-
(1986)
J. Vac. Sci. Technol. A
, vol.4
, pp. 2874
-
-
Sproul, W.D.1
-
16
-
-
0016575290
-
Low temperature deposition of metal nitrides by thermal decomposition of organometallic compounds
-
Sugiyama, K., Pac, S., Takahashi, Y. and Motojima, S., "Low Temperature Deposition of Metal Nitrides by Thermal Decomposition of Organometallic Compounds" J. Electrochem. Soc., 122, 1545 (1975).
-
(1975)
J. Electrochem. Soc.
, vol.122
, pp. 1545
-
-
Sugiyama, K.1
Pac, S.2
Takahashi, Y.3
Motojima, S.4
-
17
-
-
13444284157
-
Vibrational spectra of gaseous and liquid tetrakis(dimethylamido) titanium, and tetrakis(diethylamido)titanium
-
Vab der Vis, M. G. M., Konings, R. J. M., Oskam, A. and Walter, R., "Vibrational Spectra of Gaseous and Liquid Tetrakis(dimethylamido) titanium, and Tetrakis(diethylamido)titanium;' J. Mol. Struct., 93, 323 (1994).
-
(1994)
J. Mol. Struct.
, vol.93
, pp. 323
-
-
Vab Der Vis, M.G.M.1
Konings, R.J.M.2
Oskam, A.3
Walter, R.4
-
18
-
-
15844400650
-
Chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia: Kinetics and mechanistic studies of the gas-phase chemistry
-
Weiller, B. H., "Chemical Vapor Deposition of TiN from Tetrakis(dimethylamido)titanium and Ammonia: Kinetics and Mechanistic Studies of the Gas-phase Chemistry," J. Am. Chem. Soc., 118, 4975 (1996).
-
(1996)
J. Am. Chem. Soc.
, vol.118
, pp. 4975
-
-
Weiller, B.H.1
-
19
-
-
0001643341
-
Thin zirconium nitride films prepared by plasma-enhanced CVD
-
Wendel, H. and Surh, H., "Thin Zirconium Nitride Films Prepared by Plasma-enhanced CVD" Appl. Phys. A, 54, 389 (1992).
-
(1992)
Appl. Phys. A
, vol.54
, pp. 389
-
-
Wendel, H.1
Surh, H.2
-
20
-
-
0141731355
-
Applications of atomic layer chemical vapor deposition for the processing of nanolaminate structures
-
Yong, K. and Jeong, J., "Applications of Atomic Layer Chemical Vapor Deposition for the Processing of Nanolaminate Structures" Korean J. Chem. Eng., 19, 451 (2002).
-
(2002)
Korean J. Chem. Eng.
, vol.19
, pp. 451
-
-
Yong, K.1
Jeong, J.2
-
21
-
-
0032123897
-
Effect of the gas-phase reaction in metalorganic chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium
-
Yun, J.-H. Park, M.-Y and Rhee, S.-W, "Effect of the Gas-phase Reaction in Metalorganic Chemical Vapor Deposition of TiN from Tetrakis(dimethylamido)titanium" J. Electrochem. Soc., 145, 2453 (1998).
-
(1998)
J. Electrochem. Soc.
, vol.145
, pp. 2453
-
-
Yun, J.-H.1
Park, M.-Y.2
Rhee, S.-W.3
-
22
-
-
0032070391
-
2 in the remote plasma enhanced metalorganic chemicaL Vapor deposition of TiN from tetrakis(diethylamido)titanium
-
2 in the Remote Plasma Enhanced Metalorganic Chemical Vapor Deposition of TiN from Tetrakis(diethylamido)titanium," Thin Solid Films, 320, 163 (1998).
-
(1998)
Thin Solid Films
, vol.320
, pp. 163
-
-
Yun, J.-Y.1
Rhee, S.-W.2
-
23
-
-
0030363887
-
Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier
-
Yun, J.-Y. and Rhee, S.-W., "Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition of TiN for Diffusion Barrier," Korean J. Chem. Eng., 13, 510 (1996).
-
(1996)
Korean J. Chem. Eng.
, vol.13
, pp. 510
-
-
Yun, J.-Y.1
Rhee, S.-W.2
|