Gadolinium nitride films deposited using a PEALD based process

Journal of Crystal Growth

Volumn 338, Issue 1, 2012, Pages 111-117

  Fang, Ziwen ^a   Williams, Paul A ^b   Odedra, Rajesh ^b   Jeon, Hyeongtag ^c   Potter, Richard J ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b SAFC Hitech   (United Kingdom)

^c Hanyang University   (South Korea)

Author keywords

A1. Auger electron spectroscopy; A1. Medium energy ion scattering; A3. Atomic layer deposition; B1. Gadolinium compounds; B1. Nitrides; B2. Magnetic materials

Indexed keywords

FILM COMPOSITION; GADOLINIUM NITRIDE; LOW OXYGEN; MEDIUM ENERGY ION SCATTERING; POST-DEPOSITION; SI(1 0 0); TANTALUM NITRIDES; THERMAL ALD; THICKNESS UNIFORMITY;

AMORPHOUS FILMS; ARGON; ATOMIC LAYER DEPOSITION; AUGER ELECTRON SPECTROSCOPY; MAGNETIC MATERIALS; NITRIDES; NITROGEN PLASMA; PLASMA DEPOSITION; PLASMA INTERACTIONS; PYROLYSIS; TANTALUM; TANTALUM COMPOUNDS; X RAY DIFFRACTION;

GADOLINIUM;

EID: 84655167687     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.10.049     Document Type: Article

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