Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry

Applied Surface Science

Volumn 328, Issue , 2015, Pages 344-348

  Muneshwar, Triratna ^a   Cadien, Ken ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

ALD film growth; Bruggeman's EMA; Dynamic in situ SE analysis; Surface reactions

Indexed keywords

ATOMIC LAYER DEPOSITION; SPECTROSCOPIC ELLIPSOMETRY; SURFACE REACTIONS; THIN FILMS; ZIRCONIUM COMPOUNDS;

BRUGGEMAN'S EMA; COMBINED EFFECT; DEPOSITION CYCLES; EFFECTIVE MEDIUM APPROXIMATION; PRECURSOR MOLECULES; SUBSTRATE SURFACE; SURFACE COVERAGES; ZIRCONIUM NITRIDE (ZRN);

FILM GROWTH;

EID: 84922261414     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.12.044     Document Type: Article

References (37)

1. International Technology Roadmap for Semiconductors 2012 www.itrs.net
2. A.M. Shevjakov, G.N. Kuznetsova, and V.B. Aleskovskii Interaction of titanium and germanium tetrachlorides with hydrated silica High Temperature Chemistry of Oxides Leningrad, USSR (Nauka, Leningrad, USSR, 1967) 1965 149 155
3. J. Antson, T. Suntola, Method for producing compound thin films, 4,058,430 (1977). https://www.google.com/patents/US4058430.
4. S.M. George, A.W. Ott, and J.W. Klaus Surface chemistry for atomic layer growth J. Phys. Chem. 100 1996 13121 13131 10.1021/jp9536763
5. R.L. Puurunen Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process J. Appl. Phys. 97 2005 121301 10.1063/1.1940727
6. 3 films grown by atomic layer deposition on silicon and various metal substrates Thin Solid Films 413 2002 186 197 10.1016/S0040-6090(02)00438-8
7. K. Knapas, and M. Ritala In situ studies on reaction mechanisms in atomic layer deposition Crit. Rev. Solid State Mater. Sci. 38 2013 167 202 10.1080/10408436.2012.693460
8. H. Tiznado, M. Bouman, B.-C. Kang, I. Lee, and F. Zaera Mechanistic details of atomic layer deposition (ALD) processes for metal nitride film growth J. Mol. Catal. Chem. 281 2008 35 43 10.1016/j.molcata.2007.06.010
9. 2 : growth initiation study on metallic underlayers Thin Solid Films 518 2010 4081 4086 10.1016/j.tsf.2009.10.146
10. R. Methaapanon, S.M. Geyer, S. Brennan, and S.F. Bent Size dependent effects in nucleation of Ru and Ru oxide thin films by atomic layer deposition measured by synchrotron radiation X-ray diffraction Chem. Mater. 25 2013 3458 3463 10.1021/cm401585k
11. 2 gate dielectric layers J. Appl. Phys. 94 2003 3403 10.1063/1.1599978
12. R.L. Puurunen Growth per cycle in atomic layer deposition: a theoretical model Chem. Vap. Depos. 9 2003 249 257 10.1002/cvde.200306265
13. R.L. Puurunen, and W. Vandervorst Island growth as a growth mode in atomic layer deposition: a phenomenological model J. Appl. Phys. 96 2004 7686 10.1063/1.1810193
14. R.L. Puurunen, W. Vandervorst, W.F.A. Besling, O. Richard, H. Bender, and T. Conard Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: growth mode modeling and transmission electron microscopy J. Appl. Phys. 96 2004 4878 10.1063/1.1787624
15. R.L. Puurunen Random deposition as a growth mode in atomic layer deposition Chem. Vap. Depos. 10 2004 159 170 10.1002/cvde.200306283
16. H. Kim, H.-B.-R. Lee, and W.-J. Maeng Applications of atomic layer deposition to nanofabrication and emerging nanodevices Thin Solid Films 517 2009 2563 2580 10.1016/j.tsf.2008.09.007
17. S.M. George Atomic layer deposition: an overview Chem. Rev. 110 2010 111 131 10.1021/cr900056b
18. H. Arwin, and D.E. Aspnes Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry Thin Solid Films 113 1984 101 113 10.1016/0040-6090(84)90019-1
19. K. Vedam, R. Rai, F. Lukes, and R. Srinivasan Simultaneous and independent determination of the refractive index and the thickness of thin films by ellipsometry J. Opt. Soc. Am. 58 1968 526 10.1364/JOSA.58.000526
20. R.W. Collins Automatic rotating element ellipsometers: calibration, operation, and real-time applications Rev. Sci. Instrum. 61 1990 2029 10.1063/1.1141417
21. I. An, Y.M. Li, H.V. Nguyen, and R.W. Collins Spectroscopic ellipsometry on the millisecond time scale for real-time investigations of thin-film and surface phenomena Rev. Sci. Instrum. 63 1992 3842 10.1063/1.1143280
22. F. Meyer, E.E. De Kluizenaar, and G.A. Bootsma Ellipsometry and the clean surfaces of silicon and germanium Surf. Sci. 27 1971 88 106 10.1016/0039-6028(71)90163-4
23. F.H.P.M. Habraken, O.L.J. Gijzeman, and G.A. Bootsma Ellipsometry of clean surfaces, submonolayer and monolayer films Surf. Sci. 96 1980 482 507 10.1016/0039-6028(80)90322-2
24. G.A. Bootsma, and F. Meyer Ellipsometry in the sub-monolayer region Surf. Sci. 14 1969 52 76 10.1016/0039-6028(69)90045-4
25. R.H. Muller, and J.C. Farmer Macroscopic optical model for the ellipsometry of an underpotential deposit: lead on copper and silver Surf. Sci. 135 1983 521 531 10.1016/0039-6028(83)90239-X
26. E. Langereis, S.B.S. Heil, H.C.M. Knoops, W. Keuning, M.C.M. van de Sanden, and W.M.M. Kessels In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition J. Phys. Appl. Phys. 42 2009 073001 10.1088/0022-3727/42/7/073001
27. H. Wang, X. Jiang, and B.G. Willis Real-time spectroscopic ellipsometric investigation of adsorption and desorption in atomic layer deposition: a case study for the strontium bis(tri-isopropylcyclopentadienyl)/water process J. Vac. Sci. Technol. Vac. Surf. Films 30 2012 01A133 10.1116/1.3664757
28. H. Fujiwara Spectroscopic Ellipsometry: Principles and Applications 2007 Wiley West Sussex, UK http://www.amazon.com/Spectroscopic-Ellipsometry-Applications-Hiroyuki-Fujiwara/dp/0470016086
29. R. Kleim, L. Kuntzler, and A.E. Ghemmaz Systematic errors in rotating-compensator ellipsometry J. Opt. Soc. Am. A 11 1994 2550 10.1364/JOSAA.11.002550
30. L.J. Hanekamp, S.J.H. Brader, and G.A. Bootsma Spectroscopic ellipsometric investigation of the clean and oxygen exposed Ni(1 1 0) surface Surf. Sci. 135 1983 383 395 10.1016/0039-6028(83)90231-5
31. D. Aspnes, J. Theeten, and F. Hottier Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry Phys. Rev. B 20 1979 3292 3302 10.1103/PhysRevB.20.3292
32. M. Scheller, C. Jansen, and M. Koch Applications of effective medium theories in the terahertz regime K. Young, Recent Optical and Photonic Technologies 2010 InTech http://www.intechopen.com/books/recent-optical-and-photonic-technologies/applications-of-effective-medium-theories-in-the-terahertz-regime (accessed 06.08.13)
33. P.I. Cohen, G.S. Petrich, P.R. Pukite, G.J. Whaley, and A.S. Arrott Birth-death models of epitaxy Surf. Sci. 216 1989 222 248 10.1016/0039-6028(89)90655-9
34. A.V. Tikhonravov, M.K. Trubetskov, E. Masetti, A.V. Krasilnikova, and I.V. Kochikov Sensitivity of the ellipsometric angles psi and delta to the surface inhomogeneity C. Amra, H.A. Macleod, Advances in Optical Interference Coatings 1999 173 182 10.1117/12.360078
35. N. Matsuo, N. Kawamoto, and T. Miyoshi Influence of microroughness of Si and native oxide on adsorption of organic carbon in water Jpn. J. Appl. Phys. 37 1998 4328 4329 10.1143/JJAP.37.4328
36. S.A. Kovalenko, and M.p. Lisitsa Thickness dependences of optical constants for thin layers of some metals and semiconductors Semicond. Phys. Quantum Electron. Optoelectron. 4 2001 352 357
37. D. Valerini, M.A. Signore, A. Rizzo, and L. Tapfer Optical function evolution of ion-assisted ZrN films deposited by sputtering J. Appl. Phys. 108 2010 083536 10.1063/1.3493267