Plasma-enhanced atomic layer deposition of tantalum nitrides using hydrogen radicals as a reducing agent

Electrochemical and Solid-State Letters

Volumn 4, Issue 4, 2001, Pages

  Park, Jin Seong ^a   Lee, Min Jung ^a   Lee, Choon Soo ^b   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Genitech Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELECTRIC CONDUCTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HYDROGEN RADICALS; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE STRUCTURES; TANTALUM NITRIDES;

TANTALUM COMPOUNDS;

EID: 0035323475     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1353160     Document Type: Article

References (11)